2SK3589-01_03

2SK3589-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR *2 mJ Maximum Avalanche Energy EAS *1 kV/µs Maximum Drain-Source dV/dt dV DS /dt kV/µs Peak Diode Recovery dV/dt dV/dt *3 Max. power dissipation PD W W Operating and storage Tch °C temperature range Tstg °C