2SK3589

2SK3589-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOS FET MOSFET POWER FUJI Outline Drawings (mm) 外形寸法図 OUT VIEW Fig.1 Ｐ矢視図参照 MARKING 表示内容 Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Ｐ矢視図 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Tch Tstg Ratings 100 70 ±50 ±6.9 ** ±200 ±30 50 465 20 5 123 2.4 +150 Unit V V A A A V A mJ kV/µs kV/µs W W °C °C DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. 注）１.（ ）内寸法は参考値とする。 表示内容 商標 Special specification for customer CONNECTION 11 G : : Gate G Gate 結線図 S1 : : Source1 22 S1 Source1 33 S2 : : Source2 S2 Source2 44 D : : Drain G D Drain S1 S2 D 特殊品記号 Lot No. ロットNo. Type name 形名 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source -55 to +150 ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=223µH, Vcc=48V *2 Tch< 150°C *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = = *5 VGS=-30V *4 VDS