2SK3591-01MR_03

2SK3591-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 150 V 120 A Continuous drain current ±57 Equivalent A Pulsed drain current ±228 V Gate-source voltage ±30 A Non-repetitive Avalanche current 57 mJ Maximum Avalanche Energy 272.5 kV/µs Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 2.16 W Gate(G) 95 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation voltage VISO *6 2 kVrms *1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch