2SK3595-01MR
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 200 170 ±45 ±180 ±30 45 258.9 20 5 2.16 95 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*6
*1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < 150°C = < 200V *5 VGS=-30V *6 t=60sec f=60Hz < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *3 IF = *4 VDS = = =
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC=100V ID=30A VGS=10V L=205µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C
Min.
200 3.0
Typ.
Max.
5.0 25 250 100 66
Units
V V µA nA mΩ S pF
10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 45 1.10 1.65 0.19 1.4
ns
nC
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.316 58.0
Units
°C/W °C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3595-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
100 90 80
800
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V
700 IAS=18A
600 70 60 500 IAS=27A
EAS [mJ]
PD [W]
IAS=45A 400
50 40 30
300
200 20 10 0 0 25 50 75 100 125 150 100
0 0 25 50 75 100 125 150
Tc [°C]
starting Tch [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
120 20V 100 10V 8V 80 7.5V 10 100
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID [A]
60
7.0V
40
6.5V 6.0V
ID[A]
1
20 VGS=5.5V 0 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 0.1
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100 0.20
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.15
VGS= 6.0V 5.5V
6.5V
7.0V
RDS(on) [ Ω ]
10
7.5V 8V 0.10 10V 20V
gfs [S]
1
0.05
0.1 0.1
0.00 1 10 100 0 20 40 60 80 100 120
ID [A]
ID [A]
2
2SK3595-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V
200 180 160 7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A
RDS(on) [ m Ω ]
VGS(th) [V]
140 120 100 80 60 typ. 40 20 0 -50 -25 0 25 50 75 100 125 150 max.
max.
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=30A, Tch=25°C
10 14 12 10
0 1
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Ciss
10 Vcc= 100V
VGS [V]
8 6
C [nF]
Coss
10 4 2 0 0 10 20 30 40 50 60 70 80
-1
Crss
10
-2
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100 10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
tf
2
10
10
td(off)
IF [A]
t [ns]
td(on)
1
1
10
tr
0.1 0.00
10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3595-01MR
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V
Single Pulse
FUJI POWER MOSFET
10
2
Avalanche Current I AV [A]
10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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