2SK3597

2SK3597-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOS FET MOSFET FUJI POWER Outline Drawings (mm) 外形寸法図 OUT VIEW Fig.1 Ｐ矢視図参照 MARKING 表示内容 Fig.1 Ｐ矢視図 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range 2 DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. 注）１.（ ）内寸法は参考値とする。 表示内容 商標 Special specification for customer Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Tch Tstg Ratings 200 170 ±30 ±4.3 ** ±120 ±30 30 387 20 5 135 2.4 +150 -55 to +150 2 Unit V V A A A V A mJ kV/µs kV/µs W °C °C CONNECTION 11 G : : Gate G Gate 結線図 S1 : : Source1 22 S1 Source1 33 S2 : : Source2 S2 Source2 44 D : : Drain G D Drain S1 S2 D 特殊品記号 Lot No. ロットNo. Type name 形名 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source ** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm ) *1 L=689µH, Vcc=48V *2 Tch< 150°C *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = = *4 VDS < 200V *5 VGS=-30V = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC=100V ID=30A VGS=10V L=100µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min. 200 3.0 Typ. Max. 5.0 25 250 100 66 Units V V µA nA mΩ S pF 10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 30 1.10 1.65 0.19 1.4 ns nC A V µs µC Thermalcharacteristics Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Item Min. Typ. Max. 0.926 87.0 52.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 2SK3597-01 Characteristics Allowable Power Dissipation PD=f(Tc) 5 FUJI POWER MOSFET 200 175 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 2 4 150 125 (Drain pad area : 500mm ) 3 PD [W] 100 75 50 PD [W] 0 25 50 75 100 125 150 2 1 25 0 0 0 25 50 75 100 125 150 Tc [°C] Tc [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)