2SK3599-01MR

2SK3599-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 100 70 ±29 ±116 ±30 29 155.8 20 5 2.16 37 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) *6 *1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *2 Tch < 150°C = < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS < 100V *5 VGS=-30V *6 t=60sec f=60Hz *3 IF = = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=10A VGS=10V RGS=10 Ω V CC =50V ID=20A VGS=10V L=222µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 47 12 730 190 12 12 3.8 23 8.5 22 9 6 1.10 65 0.17 Min. 100 3.0 Typ. Max. 5.0 25 250 100 62 1095 285 18 18 6 35 13 33 13.5 9 1.65 Units V V µA nA mΩ S pF 6 ns nC 29 A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.378 58.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 2SK3599-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 50 45 40 400 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=12A 350 300 35 30 250 IAS=17A EAS [mJ] PD [W] 25 20 15 200 IAS=29A 150 100 10 5 0 0 25 50 75 100 125 150 50 0 0 25 50 75 100 125 150 Tc [°C] starting Tch [°C] Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 80 20V 10V 60 10 100 Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID [A] 40 8V 7.5V ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 10 12 7.0V 20 6.5V 6.0V VGS=5.5V 0 0 2 4 6 8 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 0.18 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS= 5.5V 6.0V 0.15 6.5V 7.0V 7.5V 8V RDS(on) [ Ω ] 10 0.12 gfs [S] 0.09 10V 0.06 20V 0.03 1 0.1 0.1 1 10 100 0.00 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3599-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V 150 7.0 6.5 125 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA max. RDS(on) [ m Ω ] 100 VGS(th) [V] 4.5 4.0 3.5 3.0 min. 75 max. 50 2.5 typ. 2.0 1.5 25 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=20A, Tch=25°C 10 14 12 10 0 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Ciss VGS [V] 8 6 Vcc= 50V C [nF] Coss 10 4 2 -1 Crss 0 0 10 20 30 40 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10Ω tf 10 10 2 IF [A] t [ns] td(off) td(on) 1 10 1 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3599-01MR Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V FUJI POWER MOSFET 10 2 [A] Single Pulse 10 1 Avalanche Current I AV 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4