2SK3601-01

2SK3601-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER N-CHANNEL SILICON POWER MOS FET MOSFET OUT VIEW Outline Drawings (mm) 外形寸法図 Fig.1 Ｐ矢視図参照 MARKING 表示内容 Fig.1 Ｐ矢視図 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. 注）１.（ ）内寸法は参考値とする。 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range 2 表示内容 商標 Special specification for customer Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Tch Tstg Ratings 100 70 ±20 ±4.4 ±80 ±30 20 227 20 5 50 2.4 ** +150 -55 to +150 2 Unit V V A A A V A mJ kV/µs kV/µs W °C °C CONNECTION 11 G : : Gate G Gate 結線図 S1 : : Source1 22 S1 Source1 33 S2 : : Source2 S2 Source2 44 D : : Drain G D Drain S1 S2 D 特殊品記号 Lot No. ロットNo. Type name 形名 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source ** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm ) *1 L=681µH, Vcc=48V *2 Tch< 150°C *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = = *4 VDS < 100V *5 VGS=-30V = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=±30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=10A VGS=10V RGS=10 Ω V CC =50V ID=20A VGS=10V L=100µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 47 12 730 190 12 12 3.8 23 8.5 22 9 6 1.10 65 0.17 Min. 100 3.0 Typ. Max. 5.0 25 250 100 62 1095 285 18 18 6 35 13 33 13.5 9 1.65 Units V V µA nA mΩ S pF 6 ns nC 20 A V ns µC Thermalcharacteristics Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Item Min. Typ. Max. 2.5 87.0 52.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 2SK3601-01 Characteristics Allowable Power Dissipation PD=f(Tc) 5 FUJI POWER MOSFET 70 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 60 4 50 3 (Drain pad area : 500mm ) 2 40 PD [W] 30 PD [W] 0 25 50 75 100 125 150 2 20 1 10 0 0 0 25 50 75 100 125 150 Tc [°C] Tc [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)