2SK3603-01MR

2SK3603-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 150 120 ±23 ±92 ±30 23 130.8 20 5 2.16 37 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) *6 *1 L=363µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *2 Tch < 150°C = *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS < 150V *5 VGS=-30V *6 t=60sec f=60Hz = = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=8A VGS=10V RGS=10 Ω V CC =75V ID=16A VGS=10V L=363µH Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 79 12 760 130 6 12 2.8 22 6.2 21 9 6 1.10 0.13 0.59 Min. 150 3.0 Typ. Max. 5.0 25 250 100 105 1140 195 9 18 4.2 33 9.3 31.5 13.5 9 1.65 Units V V µA nA mΩ S pF 6 ns nC 23 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.378 58.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 2SK3603-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 50 45 40 400 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=9A 350 300 35 30 25 20 15 100 10 5 0 0 25 50 75 100 125 150 50 250 EAS [mJ] PD [W] IAS=14A 200 150 IAS=23A 0 0 25 50 75 100 125 150 Tc [°C] starting Tch [°C] Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 60 100 Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 50 20V 10V 8V 40 10 ID [A] 30 7.5V 7.0V ID[A] 1 0.1 12 0 1 2 3 4 5 6 7 8 9 10 10 20 6.5V 10 6.0V VGS=5.5V 0 0 2 4 6 8 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS= 5.5V 6.0V 6.5V 7.0V 7.5V 0.25 8V RDS(on) [ Ω ] 10 0.20 10V 0.15 gfs [S] 1 0.10 20V 0.05 0.1 0.1 0.00 1 10 100 0 10 20 30 40 ID [A] ID [A] 2 2SK3603-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 300 7.0 6.5 250 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µ A max. RDS(on) [ m Ω ] 200 VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 min. 150 max. 100 typ. 50 2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=16A, Tch=25°C 14 10 0 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 10 -1 Ciss VGS [V] 8 6 4 Vcc= 75V 10 -2 C [nF] Coss Crss 2 0 0 10 20 30 40 -3 10 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10Ω tf 10 10 2 IF [A] t [ns] td(off) td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3603-01MR Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4