2SK3611-01MR

2SK3611-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 250 V 220 A Continuous drain current ±14 Equivalent A Pulsed drain current ±56 V Gate-source voltage ±30 A Non-repetitive Avalanche current 14 mJ Maximum Avalanche Energy 129.1 kV/µs Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 2.16 W Gate(G) 37 +150 Operating and storage Tch °C temperature range Tstg °C -55 to +150 kVrms Isolation voltage VISO 2 *1 L=1.11mH, Vcc=48V,Tch=25°C,See to Avalanche Enrgy Graph *2 Tch < 150°C = *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS < 250V *5 VGS=-30V *6 t=60sec f=60Hz = = = = Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V RGS=10 Ω VCC =125V ID=10A VGS=10V L=1.11mH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C 10 200 10 785 88 4 12 2.7 22 7.4 21 8 5 1.10 0.155 1.05 Min. 250 3.0 Typ. Max. 5.0 25 250 100 260 1178 132 6 18 4.1 33 11.1 31.5 12 7.5 1.65 Units V V µA nA mΩ S pF 5 ns nC 14 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.378 58.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 2SK3611-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 50 350 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=6A 300 40 250 30 IAS=9A EAS [mJ] 200 PD [W] 20 150 IAS=14A 100 10 50 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [°C] starting Tch [°C] Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 30 20V 25 10V 8V 7.5V 7.0V 20 10 100 Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID [A] 15 6.5V 10 ID[A] 1 0.1 0 6.0V 5 VGS=5.5V 0 0 2 4 6 8 10 12 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 0.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS= 5.5V 0.5 7.0V 6.0V 6.5V RDS(on) [ Ω ] 10 0.4 7.5V 8V 10V 20V gfs [S] 0.3 1 0.2 0.1 0.1 0.1 0.0 1 10 100 0 5 10 15 20 25 30 ID [A] ID [A] 2 2SK3611-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 800 700 600 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA 7.0 6.5 6.0 5.5 5.0 max. RDS(on) [ m Ω ] VGS(th) [V] max. 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 150 typ. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [°C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25°C 14 12 10 10 -1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 0 Ciss VGS [V] 8 Vcc= 125V 6 4 2 C [nF] Coss 10 -2 Crss 0 0 10 20 30 40 10 -3 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 10 10 2 tf IF [A] t [ns] td(off) td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3611-01MR Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=48V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4