2SK3648-01

2SK3648-01 FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 150 120 ±33 ±132 ±30 33 169 20 5 2.02 150 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) < *1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C < < < < *3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 VDS = 150V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V Tch=25°C Tch=125°C VDS=120V VGS=0V VGS=±30V VDS=0V ID=11.5A VGS=10V ID=11.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=11.5A VGS=10V RGS=10 Ω V CC =48V ID=23A VGS=10V L=228µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=25°C Min. 150 3.0 Typ. Max. 5.0 25 250 100 70 1730 300 26 20 23 51 23 51 13.5 19 1.65 Units V V µA nA mΩ S pF 8 10 54 16 1150 200 17 13 15 34 15 34 9 12.5 33 1.10 130 0.6 ns nC A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.833 62.0 Units °C/W °C/W 1 2SK3648-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics 50 200 ID=f(VDS):80µs Pulse test,Tch=25°C 20V 10V 8V 7.5V 175 40 150 7.0V 125 PD [W] 100 ID [A] 30 6.5V 75 20 6.0V 50 10 25 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 1 2 3 4 5 6 Tc [°C] VDS [V] Typical Transfer Characteristic 100 Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 10 10 ID[A] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 gfs [S] 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.30 VGS= 5.5V 6.0V 6.5V 7.0V 7.5V 200 180 160 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 0.25 0.20 RDS(on) [ m Ω ] RDS(on) [ Ω ] 140 120 100 80 typ. max. 0.15 0.10 8V 10V 60 40 0.05 20V 20 0.00 0 5 10 15 20 25 30 35 40 45 50 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3648-01 FUJI POWER MOSFET 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 14 12 max. Typical Gate Charge Characteristics VGS=f(Qg):ID=23A, Tch=25°C Vcc= 36V 48V 5.0 VGS(th) [V] 4.5 4.0 10 72V VGS [V] 75 100 125 150 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 min. 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Tch [°C] Qg [C] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 Ciss 1n 10 C [F] Coss IF [A] 1 2 100p Crss 10p -1 10 10 0 10 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=14A 400 10 2 td(off) 300 IAS=20A tf td(on) 1 EAS [mJ] t [ns] 200 IAS=33A 10 tr 100 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3648-01 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielctric.co.jp/denshi/scd/ 4