2SK3681-01

2SK3681-01 FUJI POWER MOSFET 200401 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Repetitive or Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Symbol Ratings V DS 600 VDSX 600 ID ±43 ID(puls] ±172 VGS ±30 IAS 43 IAR EAS dV DS/dt dV/dt PD 21.5 808.9 20 5 2.50 600 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V Operating and storage Tch temperature range Tstg *1 See to Avalanche Current Graph *2 See to Avalanche Energy Graph *3 IF < -ID, -di/dt=50A/µs, VCC < BVDSS, Tch < 150°C = = = Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Tch=25°C *1 A Tch