2SK3687-01MR

2SK3687-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 600 Continuous drain current ±16 Pulsed drain current ±64 Gate-source voltage ±30 Repetitive or non-repetitive 16 Maximum avalanche energy 242.7 Maximum drain-source dV/dt 20 Peak diode recovery dV/dt 5 2.16 Max. power dissipation 97 Operating and storage Tch +150 temperature range Tstg -55 to +150 Isolation voltage VISO 2 *1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph *2 IF< -ID, -di/dt=50A/μs, Vcc < BVDSS, Tch < 150°C = = = Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Item Drain-source voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt PD Unit V V A A V A mJ kV/μ s kV/μ s W Remarks VGS=-30V Equivalent circuit schematic Tch