2SK3689-01

2SK3689-01 FUJI POWER MOSFET 200401 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 600 VDSX 600 ID ±16 ID(puls] ±64 VGS ±30 IAS 16 EAS dV DS/dt dV/dt PD Tch Tstg 242.7 20 5 2.50 235 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/µs W °C °C Remarks VGS=-30V Tch