2SK3692-01

2SK3692-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200305 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 450 VDSX *5 450 ID ±17 ID(puls] ±68 VGS ±30 IAR *2 17 EAS *1 221.9 dVDS/dt *4 20 dV/dt *3 5 PD Ta=25°C 2.02 Tc=25°C 225 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 450V = = = = °C °C *2 Tch