2SK3693-01MR

2SK3693-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit 450 V DS V VDSX *5 450 V Equivalent Continuous drain current ID ±17 A Pulsed drain current ID(puls] ±68 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 17 A Maximum Avalanche Energy EAS *1 221.9 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Gate(G) Max. power dissipation PD Ta=25°C 2.16 W Tc=25°C 80 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage Viso *6 2000 V *1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *2 Tch