2SK3697-01

2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 FUJI POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery di/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR IAR EAS dVDS/dt dV/dt -di/dt PD Tch Tstg Ratings 600 600 ±42 ±2.7 ±168 ±30 42 21 828 20 5 100 600 2.50 +150 -55 to +150 Unit V V A A A V A A mJ kV/µs kV/µs A/µs W °C °C Remarks VGS=-30V Ta=25°C Equivalent circuit schematic Drain(D) Tch < 25°C = < Tch =150°C Gate(G) Note *2 VDS