2SK3699-01MR

2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol Ratings V DS 900 VDSX *5 900 ±3.7 ID ID(puls] ±14.8 VGS ±30 IAR *2 3.7 EAS *1 171.1 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.16 Tc=25°C 43 Tch +150 -55 to +150 Tstg VISO *6 2000 Unit V V A A V A mJ kV/µs kV/µs W °C °C Vrms *6 f=60Hz, t=60sec. Equivalent circuit schematic Drain(D) Gate(G) Source(S) < *1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch =150°C < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 900V *5 VGS=-30V *3 IF = = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C Tch=125°C VDS=720V VGS=0V VGS=±30V VDS=0V ID=1.85A VGS=10V ID=1.85A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=1.85A VGS=10V RGS=10 Ω VCC =450V ID=3.7A VGS=10V L=22.9mH Tch=25°C IF=3.7A VGS=0V Tch=25°C IF=3.7A VGS=0V -di/dt=100A/µs Tch=25°C Min. 900 3.0 Typ. Max. 5.0 25 250 100 4.30 650 90 5 29 11 48 26 24.8 9.6 5.6 1.50 Units V V µA nA Ω S pF 2 3.31 4 430 60 3.5 19 7 32 17 16.5 6.4 3.7 0.9 1.0 4.0 ns nC 3.7 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.907 58.0 Units °C/W °C/W 1 2SK3699-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 60 5 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C 20V 10V 7.0V 6.5V 50 4 6.0V 40 3 PD [W] 30 ID [A] 2 20 VGS=5.5V 10 1 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 Tc [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 10 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C ID[A] 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 ID [A] 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µ s pulse test,Tch=25°C VGS=5.5V 4.4 6.0V 6.5V 7.0V 4.2 10V 12 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=1.85A,VGS=10V 10 RDS(on) [ Ω ] 4.0 20V 8 3.8 RDS(on) [ Ω ] 6 max. 3.6 4 3.4 2 typ. 3.2 3.0 0 1 2 3 4 5 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3699-01MR FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=3.7A,Tch=25°C 12 Vcc= 180V 450V 720V 8 max. 10 VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 6 4 2 0 0 5 10 15 20 25 Tch [°C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µ s pulse test,Tch=25°C 10 0 Ciss C [nF] 10 -1 IF [A] 1 Coss 10 -2 Crss 10 -3 10 0 10 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10Ω 350 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=2A 300 tf 250 10 2 IAS=3A EAS [mJ] td(off) 200 IAS=3.7A 150 t [ns] td(on) 10 1 100 tr 50 10 0 0 -1 10 10 0 10 1 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3699-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=90V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4