2SK3753-01R

2SK3753-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS ID ID(puls] VGS IAR EAS dVDS/dt dV/dt PD Tch Tstg VISO Ratings 600 ±13 ±52 ±30 13 216.7 20 5 95 3.13 +150 -55 to +150 2 Unit V A A V A mJ Remarks Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Source(S) Note *1:Tch < 150°C,Repetitive and Non-repetitive = Note *2:StartingTch=25°C,IL=2.36mH,VCC=60V EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph kV/µs VDS