2SK3770-01MR

2SK3770-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg VISO Ratings 120 90 26 ±104 ±30 26 342.2 3.7 20 5 37 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < 150°C,Repetitive and Non-repetitive = Note *2:StartingTch=25°C,IAS=11A,L=3.77mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature kV/µs VDS