2SK3874-01R

2SK3874-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 280 280 56 ±224 ±30 56 1039.1 21 20 5 210 3.13 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch< 150°C,Repetitive and Non-repetitive = Note *2:StartingTch=25°C,IAS=23A,L=3.37mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF< -ID, -di/dt=50A/µs,VCC< BVDSS,Tch< 150°C = = = kV/µs VDS=280V < kV/µs Note *4 Tc=25°C W Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=280V VGS=0V Tch=125°C VDS=224V VGS=0V VGS=±30V VDS=0V ID=28A VGS=10V ID=28A VDS=25V VDS=75V VGS=0V f=1MHz VCC=180V ID=28A VGS=10V RGS=10 Ω VCC=140V ID=56A VGS=10V IF=56A VGS=0V Tch=25°C IF=56A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient Min. 280 3.0 Typ. Max. 5.0 25 250 100 61 Units V V µA nA mΩ S pF 12 51 24 3600 5400 530 795 35 52.5 40 60 58 87 80 120 10 15 80 120 30 45 25 38 1.20 1.50 400 4.5 ns nC V ns µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 0.595 40.0 Units °C/W °C/W 1 2SK3874-01R Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 300 100 90 Typical Output Characteristics ID=f(VDS):80 µ s pulse test,Tch=25 °C 20V 10V 8V 250 80 70 200 60 PD [W] 150 ID [A] 7V 50 40 100 30 20 50 10 0 0 25 50 75 100 125 150 0 0 1 2 3 4 5 6 7 6.5V VGS=6.0V 8 9 10 Tc [°C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25°C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 0.14 0.13 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS=6V 6.5V 7V 0.200 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=28A,VGS=10V 0.12 0.11 0.175 0.150 0.10 RDS(on) [ Ω ] RDS(on) [ Ω ] 0.09 0.08 0.07 0.06 0.05 0.04 8V 10V 20V 0.125 0.100 max. 0.075 typ. 0.050 0.03 0.02 0.01 0.00 0 10 20 30 40 50 60 70 80 90 100 0.000 -50 -25 0 25 50 75 100 125 150 0.025 ID [A] Tch [°C] 2 2SK3874-01R Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=56A,Tch=25 °C 12 Vcc= 56V max. 10 140V 224V VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Tch [°C] Qg [nC] 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µ s pulse test,Tch=25°C 10 3 Coss 10 C [pF] 10 2 Crss 1 10 1 10 0 IF [A] -1 0 1 2 3 10 10 10 10 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 Ω 1200 1100 1000 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)