2SK3876-01R

2SK3876-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol V DS VDSX ID ID(puls] VGS IAS IAR EAS EAR dVDS /dt dV/dt PD Tch Tstg VISO Ratings 900 900 13 ±52 ±30 13 6.5 1006 17.0 40 5 170 3.13 +150 -55 to +150 2 Unit V V A A V A A mJ mJ Gate(G) Remarks VGS=-30V Equivalent circuit schematic Drain(D) Note *1 Note *2 Note *3 Source(S) Note *1:Tch< 150°C = Note *2:StartingTch=25°C,IAS=5.2A,L=67.5mH, VCC=100V,RG=50Ω kV/µs VDS < 900V = EAS limited by maximum channel temperature kV/µs Note *4 and Avalanche current. Tc=25°C W See to the ‘Avalanche Energy’ graph Ta=25°C Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. °C See to the ‘Transient Thermal impedance’ °C graph. kVrms t=60sec f=60Hz Note *4:IF< -ID, -di/dt=50A/µs,VCC< BVDSS, Tch< 150°C = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS =900V VGS=0V Tch=25°C Tch=125°C VDS =720V VGS=0V VGS=±30V VDS=0V ID=6.5A VGS=10V ID=6.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=6.5A VGS=10V RGS=10 Ω V CC=450V ID=13A VGS=10V IF=13A VGS=0V Tch=25°C IF=13A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient Min. 900 3.0 Typ. Max. Units 5.0 25 250 100 1.00 V V µA nA Ω S pF 0.79 6.0 12 1750 2625 220 330 13 19.5 20 30 12 18 60 90 15 22.5 46 69 14 21 17 26 1.10 1.50 4.5 25 ns nC V µs µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 0.735 40.0 Units °C/W °C/W 1 2SK3876-01R Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 250 20 Typical Output Characteristics ID=f(VDS):80 µ s pulse test,Tch=25°C 20V 6.5V 10V 8.0V 200 16 150 12 ID [A] PD [W] 6.0V 100 8 50 4 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 4 8 12 16 20 Tc [°C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 µ s pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25°C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µ s pulse test,Tch=25°C VGS=5.5V 1.4 6.0V 3.00 2.75 2.50 2.25 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V 1.2 RDS(on) [ Ω ] 2.00 RDS(on) [ Ω ] 6.5V 1.0 8.0V 10V 20V 1.75 1.50 1.25 1.00 max. 0.8 0.75 0.50 0.6 0.25 0.00 0 5 10 15 20 -50 -25 0 25 50 typ. 75 100 125 150 ID [A] Tch [°C] 2 2SK3876-01R Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=13A,Tch=25°C 12 Vcc= 180V 450V 720V max. 10 VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 10 20 30 40 50 60 70 Tch [°C] Qg [nC] 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µ s pulse test,Tch=25°C Ciss 10 3 10 C [pF] 10 2 Coss IF [A] 1 3 10 1 Crss 10 0 10 -1 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω 1200 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=100V IAS=5.2A 1000 tf 10 2 td(off) 800 IAS=7.8A 600 td(on) 10 1 EAV [mJ] t [ns] 400 tr 200 IAS=13A 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3876-01R Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=100V FUJI POWER MOSFET 16 14 12 Non-Repetitive (Single Pulse) 10 IAV [A] 8 Repetitive 6 4 2 0 0 25 50 75 100 125 150 175 200 starting Tch [°C] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=100V Avalanche Current I AV [A] Single Pulse 1 10 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4