2SK3913-01MR_05

2SK3913-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Peak diode recovery -di/dt Max. power dissipation Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt -di/dt PD Ratings 250 220 14 ±56 ±30 14 301.1 3.7 20 5 100 2.16 37 +150 -55 to +150 2 Unit V V A A V A mJ mJ kV/μ s kV/μ s A/ μ s W W °C °C kVrms Remarks VGS=-30V Note *1 Note *2 Note *3 VDS < 250V = Note *4 Note *5 Ta=25°C Tc=25°C Gate(G) Source(S) Equivalent circuit schematic Drain(D) Operating and storage Tch temperature range Tstg t=60sec, f=60Hz Isolation voltage VISO *6