2SK3914-01

2SK3914-01 Features High speed switching No secondary breadown Avalanche-proof FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt PD Tch Tstg Ratings 450 450 6 ±24 ±30 6 320 9 20 5 2.02 90 +150 -55 to +150 Unit V V A A V A mJ mJ kV/μ s kV/μ s W W °C °C Remarks VGS=-30V Note *1 Note *2 Note *3 VDS < 450V = Note *4 Ta=25°C Tc=25°C Gate(G) Source(S) Equivalent circuit schematic Drain(D) Note *1 Tch< 150°C = Note *2 Starting Tch=25°C, IAS=2.4A, L=102mH, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < -ID, -di/dt=50A/μs, Vcc < BVDSS, Tch < 150°C = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V RGS=10 Ω V CC =225V ID=6A VGS=10V IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/μs Tch=25°C Tch=25°C Tch=125°C 0.98 5 440 67 2.8 12 6.5 25 5.5 15.5 6.8 3.7 1.00 300 2.0 Min. 450 3.0 Typ. Max. 5.0 25 2.0 100 1.20 660 100 4.5 18 10 38 8.5 23.5 10.5 5.5 1.50 Units V V μA mA nA Ω S pF 2.5 ns nC V ns μC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.389 62.0 Units °C/W °C/W http://www.fujielectric.co.jp/fdt/scd/ 1 2SK3914-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 100 12 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 20V 10V 8.0V 7.0V 80 10 8 PD [W] ID [A] 60 6 6.5V 40 4 6.0V 20 2 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 16 18 20 22 Tc [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 10 100 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 10 ID[A] gfs [S] 1 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 1 0.1 0.01 3.0 0.1 0.1 1 10 VGS[V] ID [A] 3.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C VGS=5.5V 6.0V 6.5V 7.0V 3.5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 2.5 3.0 2.5 RDS(on) [ Ω ] 10V 20V RDS(on) [ Ω ] 2.0 8V 2.0 max. 1.5 typ. 1.5 1.0 1.0 0.5 0.5 0.0 0 2 4 6 ID [A] 8 10 12 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3914-01 FUJI POWER MOSFET 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 20 18 16 Typical Gate Charge Characteristics VGS=f(Qg):ID=3A,Tch=25°C VGS(th) [V] 5.0 4.5 max. 14 12 Vcc= 90V 225V 360V VGS [V] 75 100 125 150 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 min. 10 8 6 4 2 0 0 5 10 15 20 25 30 Tch [°C] Qg [nC] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25 °C 1n Ciss 10 C [F] 100p Coss 10p IF [A] 1 Crss 1p -1 10 10 0 10 1 10 2 10 3 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V 10 2 tf 400 IAS=2.4A td(off) 300 EAS [mJ] tr t [ns] 10 1 td(on) IAS=3.6A 200 IAS=6A 100 10 0 0 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3914-01 FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=45V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [ C/W] o 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4