2SK3921-01L,S,SJ
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
See to P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt PD Tch Tstg Ratings 120 90 67 ±268 ±30 67 719.1 27.0 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A mJ mJ kV/μ s kV/μ s W W °C °C Remarks VGS=-30V
Note *1 Note *2 Note *3 VDS < 120V = Note *4 Ta=25°C Tc=25°C
Gate(G) Source(S)
Equivalent circuit schematic
Drain(D)
Note *1 Tch< 150°C = Note *2 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < -ID, -di/dt=50A/μs, Vcc < BVDSS, Tch < 150°C = = =
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=120V VDS=96V VGS=±30V ID=33.5A VGS=0V VGS=0V VDS=0V VGS=10V Tch=25°C Tch=125°C
Min.
120 3.0
Typ.
Max.
5.0 25 250 100 30.0
Units
V V μA nA mΩ S pF
ID=33.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=33.5A VGS=10V RGS=10 Ω VCC =60V ID=67A VGS=10V IF=67A VGS=0V Tch=25°C IF=67A VGS=0V -di/dt=100A/μs Tch=25°C
14
24.6 28 1880 2820 360 540 30 45 20 30 35 53 50 75 23 35 52 78 16 24 18 27 1.10 1.50 150 0.9
ns
nC
V ns μC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.463 62.0
Units
°C/W °C/W
http://www.fujielectric.co.jp/fdt/scd/
1
2SK3921-01L,S,SJ
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
280
140
Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C
20V
240
120
10V
200
100 8.0V
PD [W]
ID [A]
160
80 7.5V 60 7.0V
120
80
40
6.5V 6.0V VGS=5.5V
40
20
0 0 25 50 75 100 125 150
0
0
1
2
3
4
5
6
7
Tc [°C]
VDS [V]
Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C
100
Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 100
10
ID[A]
10
gfs [S]
1
1
0.1 0 1 2 3 4 5 6 7 8 9 10
0.1 0.1
1
10
100
VGS[V]
ID [A]
0.20
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25 °C
7.0V 7.5V
0.08 0.07 0.06
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=33.5A,VGS=10V
VGS=5.5V 6.0V 6.5V 0.16
RDS(on) [ Ω ]
RDS(on) [ Ω ]
0.12
0.05 0.04 max. 0.03 typ. 0.02
0.08
0.04
10V 20V
0.01 0.00
0.00
0
20
40
60
80
100
120
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [°C]
2
2SK3921-01L,S,SJ
FUJI POWER MOSFET
7.0 6.5 6.0 5.5
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=67A,Tch=25 °C
12
VGS(th) [V]
5.0 4.5
max.
10
Vcc=60V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 min.
VGS [V]
4.0
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
90
Tch [°C]
Qg [nC]
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C
Ciss 10
3
10
C [pF]
10
2
IF [A]
1 0.1 0.00
Coss
Crss 10
1
10
0
10
1
10
2
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
tf 10
3
800 700 600
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)
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