2SK3922-01

2SK3922-01 Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TFP Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt PD Tch Tstg Ratings 120 90 ±67 ±6.3 ±268 ±30 67 719.1 27.0 20 5 2.02 270 +150 -55 to +150 Unit V V A A A V A mJ mJ kV/μ s kV/μ s W W °C °C Remarks VGS=-30V Ta=25°C Note *1 Foot Print Pattern Note *2 Note *3 Note *4 VDS < 120V = Note *5 Ta=25°C Note*1 Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Note *1 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area:500mm2) Note *2 Tch< 150°C = Note *3 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *4 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *5 IF < -ID, -di/dt=50A/μs, Vcc < BVDSS, Tch < 150°C = = = Electrical characteristics (Tc =25°C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=120V VDS=96V VGS=±30V ID=33.5A VGS=0V VGS=0V VDS=0V VGS=10V Tch=25°C Tch=125°C Min. 120 3.0 Typ. Max. 5.0 25 250 100 30.0 Units V V μA nA mΩ S pF ID=33.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=33.5A VGS=10V RGS=10 Ω VCC =60V ID=67A VGS=10V IF=67A VGS=0V Tch=25°C IF=67A VGS=0V -di/dt=100A/μs Tch=25°C 14 24.6 28 1880 2820 360 540 30 45 20 30 35 53 50 75 23 35 52 78 16 24 18 27 1.10 1.50 150 0.9 ns nC V ns μC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) *1 Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 0.463 87.0 52.0 Units °C/W °C/W °C/W http://www.fujielectric.co.jp/fdt/scd/ 1 2SK3922-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 280 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 240 4 200 3 160 PD [W] 120 PD [W] 2 80 1 40 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [°C] Tc [°C] 140 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 20V 100 Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 120 10V 100 8.0V ID [A] 80 7.5V 60 7.0V 40 ID[A] 10 1 6.5V 6.0V VGS=5.5V 20 0 0.1 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 100 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25 °C 7.0V 7.5V VGS=5.5V 6.0V 6.5V 0.16 10 RDS(on) [ Ω ] gfs [S] 0.12 0.08 1 0.04 10V 20V 0.1 0.1 0.00 1 10 100 0 20 40 60 80 100 120 ID [A] ID [A] 2 2SK3922-01 FUJI POWER MOSFET 0.08 0.07 0.06 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=33.5A,VGS=10V 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA VGS(th) [V] 5.0 4.5 4.0 3.5 3.0 2.5 max. RDS(on) [ Ω ] 0.05 0.04 max. 0.03 typ. 0.02 0.01 0.00 -50 -25 0 25 50 75 100 125 150 min. 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=67A,Tch=25 °C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 10 3 Ciss 10 Vcc=60V Coss 10 2 VGS [V] 6 4 10 1 C [pF] 8 Crss 2 0 0 10 20 30 40 50 60 70 80 90 10 0 10 1 10 2 Qg [nC] VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω tf 10 3 10 td(off) 2 IF [A] t [ns] 10 td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3922-01 FUJI POWER MOSFET 800 700 600 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)