2SK3923-01_05

2SK3923-01 Features High speed switching No secondary breadown Avalanche-proof FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Peak diode recovery -di/dt Maximum power dissipation Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt -di/dt PD Ratings 250 220 14 ±56 ±30 14 301.1 10.5 20 5 100 2.02 105 +150 Unit V V A A V A mJ mJ kV/μ s kV/μ s A/ μ s W W °C °C Remarks VGS=-30V Note *1 Note *2 Note *3 VDS < 250V = Note *4 Note *5 Ta=25°C Tc=25°C Gate(G) Source(S) Equivalent circuit schematic Drain(D) Operating and storage Tch temperature range Tstg -55 to +150 < 150°C Note *1 Tch= Note *2 Starting Tch=25°C, IAS=6A, L=14.1mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < -ID, -di/dt=100A/μs, Vcc < BVDSS, Tch < 150°C = = = Note *5 IF< -ID, dv/dt=5kV/μs, Vcc < BVDSS, Tch