2SK3926-01MR

2SK3926-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt -di/dt PD Tch Tstg VISO Ratings 250 220 34 ±136 ±30 34 665.7 9.5 20 5 100 95 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ kV/µs kV/µs A/µs W Remarks VGS=-30V Equivalent circuit schematic Drain(D) Note *1 Note *2 Note *3 VDS< 250V = Note *4 Note *5 Tc=25°C Ta=25°C Gate(G) Source(S) Note *1:Tch < 150°C,Repetitive and Non-repetitive = Note *2:StartingTch=25°C,IAS=14A,L=5.71mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph °C °C kVrms t=60sec, f=60Hz Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Symbol Rth(ch-c) Rth(ch-a) < < < Note *4:IF = -ID, -di/dt=100A/µs,VCC= BVDSS,Tch= 150°C < < < Note *5:IF= -ID, dv/dt=5kV/µs,VCC BVDSS,Tch= 150°C = Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =250V VGS=0V Tch=125°C VDS =200V VGS=0V VGS=±30V VDS=0V ID=17A VGS=10V ID=17A VDS=25V VDS =75V VGS=0V f=1MH VCC=48V ID=17A VGS=10V RGS=10 Ω VCC =125V ID=34A VGS=10V IF=34A VGS=0V Tch=25°C IF=34A VGS=0V -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient Min. 250 3.0 Typ. Max. 5.0 25 2.0 100 110 Units V V µA mA nA mΩ S pF 13 85 26 1850 2800 220 330 21 32 20 30 19 29 56 85 19 29 56 85 20 30 19 29 1.00 1.50 140 250 0.5 1.25 ns nC V ns µC Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 1.316 58 Units °C/W °C/W 1 2SK3926-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 120 100 90 Typical Output Characteristics ID=f(VDS):80 µ s pulse test,Tch=25°C 20V 10V 100 80 70 80 60 7.5V ID [A] PD [W] 7V 50 40 6.5V 60 40 30 20 20 10 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 VGS=6V 14 16 Tc [°C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 µ s pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 10 10 ID[A] 1 gfs [S] 1 0.1 0.1 0.1 0.01 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS=6.5V 7.0V 0.30 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=17A,VGS=10V 0.18 0.25 0.16 RDS(on) [ Ω ] 0.14 10V 20V RDS(on) [ Ω ] 7.5V 8V 0.20 0.15 max. 0.12 0.10 0.10 typ. 0.08 0.05 0.06 0 10 20 30 40 50 60 70 80 90 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3926-01MR Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA FUJI POWER MOSFET 7 24 Typical Gate Charge Characteristics VGS=f(Qg):ID=34A,Tch=25°C 6 20 Vcc= 50V 5 max. 16 250V 200V VGS(th) [V] VGS [V] 4 12 3 min. 8 2 1 4 0 -50 -25 0 25 50 75 100 125 150 0 0 20 40 60 80 100 120 140 Tch [°C] Qg [nC] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µ s pulse test,Tch=25°C Ciss 1n 10 C [F] Coss 100p 1 Crss 10p -1 10 0 1 2 3 IF [A] 0.1 0.00 10 10 10 10 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10Ω Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)