2SK3982-01MR

2SK3982-01MR Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Low on-resistance Low driving power High voltage TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Ratings 900 900 2.6 ±10.4 ±30 2.6 349.1 3.2 40 5 32 2.16 +150 Unit V V A A V A mJ mJ kV/µs kV/µs W W °C °C Remarks VGS=-30V Note *1 Note *2 Note *3 VDS < 900V = Note *4 Tc=25°C Ta=25°C Gate(G) Source(S) Equivalent circuit schematic Drain(D) Operating and storage Tch temperature range Tstg -55 to +150 < 150°C Note *1 Tch= Note *2 Starting Tch=25°C, IAS=1.1A, L=524mH, VCC=100V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C VDS=720V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=1.3A VGS=10V ID=1.3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=1.3A VGS=10V RGS=10 Ω V CC=450V ID=2.6A VGS=10V IF=2.6A VGS=0V Tch=25°C IF=2.6A VGS=0V -di/dt=100A/µs Tch=25°C Min. 900 3.0 Typ. Max. 5.0 25 250 100 6.4 495 66 5.0 15.8 9.8 42 30 19.5 6.5 6.8 1.50 Units V V µA nA Ω S pF 1.3 4.8 2.6 330 44 2.5 10.5 6.5 28 20 13 4.5 4.3 1.00 1.5 4.0 ns nC V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.906 58.0 Units °C/W °C/W http://www.fujielectric.co.jp/fdt/scd/ 1 2SK3982-01MR(900V/2.6A/6.4Ω) Characteristics FUJI POWER MOSFET 2 2SK3982-01MR(900V/2.6A/6.4Ω) FUJI POWER MOSFET 3 2SK3982-01MR(900V/2.6A/6.4Ω) FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ 4