2SK3983-01L,S,SJ
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
See to P4 Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 900 900 ±2.6 ±10.4 ±30 2.6 349.1 9.0 40 5 90 1.67 +150 -55 to +150 Unit V V A A V A mJ mJ kV/µs kV/µs W W °C °C Remarks VGS=-30V
Note *1 Note *2 Note *3 VDS < 900V = Note *4 Tc=25°C Ta=25°C
Gate(G) Source(S)
Equivalent circuit schematic
Drain(D)
Note *1 Tch
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