2SK3990-01L

2SK3990-01L,S,SJ Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR dV DS /dt dV/dt PD Tch Tstg Ratings 600 600 3.0 ±12.0 ±30 3.0 237.3 6.0 20 5 60 2.02 +150 -55 to +150 Unit V V A A V A mJ mJ kV/μ s kV/μ s W W °C °C Remarks VGS=-30V Note *1 Note *2 Note *3 VDS < 600V = Note *4 Tc=25°C Ta=25°C Gate(G) Source(S) Equivalent circuit schematic Drain(D) Note *1 Tch< 150°C = Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < -ID, -di/dt=50A/μs, Vcc < BVDSS, Tch < 150°C = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Test Conditions VGS=0V ID= 250μA ID= 250μA VDS=VGS Tch=25°C VDS=600V VGS=0V Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=1.5A VGS=10V ID=1.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=1.5A VGS=10V RGS=10 Ω VCC =250V ID=3.0A VGS=10V IF=3.0A VGS=0V Tch=25°C IF=3.0A VGS=0V -di/dt=100A/μs Tch=25°C Min. 600 3.0 Typ. Max. 5.0 25 250 100 3.3 500 75 5.0 18 7.5 35 15 20 8.5 4.2 1.50 Units V V μA nA Ω S pF 1.5 2.64 3.0 330 50 2.5 11 5.0 23 10 13 5.5 2.8 1.00 0.5 2.3 ns nC V μs μC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.083 62.0 Units °C/W °C/W http://www.fujielectric.co.jp/fdt/scd/ 1 2SK3990-01L,S,SJ Characteristics (600V/3.0A/3.3Ω) FUJI POWER MOSFET 2 2SK3990-01L,S,SJ (600V/3.0A/3.3Ω) FUJI POWER MOSFET 3 2SK3990-01L,S,SJ (600V/3.0A/3.3Ω) FUJI POWER MOSFET Outline Drawings [mm] T-pack(L) T-pack(S) T-pack(SJ) [D2-pack] http://www.fujielectric.co.jp/fdt/scd/ 4