3MBI150U-120

3MBI150U-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 150A 3 in one-package Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 1200 ±20 200 150 400 300 150 300 735 +150 -40 to +125 2500 3.5 Unit V V A Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 1 device W °C VAC N·m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=150A VGE=±15V RG=2.2 Ω VGE=0V IF=150A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 2.15 – 2.40 – 1.75 – 2.00 – 17 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 2.00 – 2.10 – 1.60 – 1.70 – – – 2.4 Unit Max. 1.0 200 8.5 2.50 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.30 – 1.90 – 0.35 – mA nA V V Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=150A µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.05 Unit Max. 0.17 0.28 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 3MBI150U-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 400 400 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip VGE=20V 300 Collector current : Ic [A] 15V 12V 300 Collector current : Ic [A] VGE=20V 15V 12V 200 10V 200 10V 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 400 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector - Emitter voltage : VCE [ V ] 300 Collector current : Ic [A] T j=25°C T j=125°C 8 6 200 4 100 2 Ic=300A Ic=150A Ic= 75A 5 10 15 20 25 0 0 1 2 3 4 0 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] Cies 10.0 VGE Cres 1.0 Coes VCE 0 0 200 400 600 800 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 3MBI150U-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj=125°C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 50 100 150 200 250 300 Collector current : Ic [ A ] 10 0 50 100 150 200 250 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 30 25 20 15 10 5 0 0.1 1.0 10.0 100.0 1000.0 0 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω Eoff(125°C) Eon(125°C) ton toff 1000 Eoff(25°C) Eon(25°C) tr 100 tf Err(125°C) Err(25°C) 10 100 200 300 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C 125 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 100 Collector current : Ic [ A ] 300 400 Reverse bias safe operating area (max.) +VGE=15V,-VGE = 2.2Ω ,Tj