6MBI100UC-120

6MBI100UC-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure · With shunt resustors 1200V / 100A 6 in one-package Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 1200 ±20 150 100 300 200 100 200 520 +150 -40 to +125 2500 3.5 Unit V V A Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 1 device W °C VAC N·m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbols ICES IGES VGE(th) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (chip) t rr R lead R shunt Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=100mA VGE=15V, IC=100A Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=100A VGE=±15V RG=5.6 Ω Tj=25°C Tj=125°C IF=100A IF=100A Without shunt resistance Resistance of R1,R2,R3 *4 VGE=0V Characteristics Min. Typ. – – – – 4.5 6.5 – 1.75 – 2.00 – 11 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.60 – 1.70 – – – 5.7 – 1.5 Unit Max. 1.0 200 8.5 2.10 – – 1.20 0.60 – 1.00 0.30 1.90 – 0.35 – – mA nA V V nF µs Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 Shunt resistance V µs mΩ *3: Biggest internal terminal resistance among arm. *4: R1, R2,R3 is shown in equivalent circuit (p5) Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.05 Unit Max. 0.24 0.39 – °C/W °C/W °C/W *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI100UC-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 300 300 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Collector current : Ic [A] Collector current : Ic [A] VGE=20V 200 15V 12V VGE=20V 200 15V 12V 10V 100 10V 100 8V 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 300 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [A] T j=25°C 200 6 T j=125°C 100 4 2 Ic=200A Ic=100A Ic= 50A 5 10 15 20 25 0 0 1 2 3 4 0 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] Cies 10.0 VGE Cres 1.0 Coes 0.1 0 10 20 30 0 0 100 200 300 VCE 400 500 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI100UC-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6 ohm, Tj= 25°C 10000 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6 ohm, Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 50 100 150 200 Collector current : Ic [ A ] 10 0 50 100 150 200 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6 ohm Eoff(125°C) Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 Eon(125°C) 15 Eoff(25°C) 10 Eon(25°C) tr 100 tf 5 Err(125°C) Err(25°C) 10 1 10 100 1000 0 0 50 100 150 200 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C 75 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 300 Reverse bias safe operating area (max.) +VGE=15V,-VGE = 5.6 ohm ,Tj