6MBI100VW-120-50

6MBI100VW-120-50 IGBT MODULE (V series) 1200V / 100A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Maximum ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Tjop Tc Tstg AC : 1min. M5 Conditions Maximum ratings 1200 ±20 100 200 100 200 520 175 150 125 -40 to +125 2500 3.5 VAC Nm Units V V A W Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Collector power dissipation Junction temperature Operating junciton temperature (under switching conditions) Case temperature Storage temperature Isolation voltage Screw torque °C between terminal and copper base (*1) Viso between thermistor and others (*2) Mounting (*3) - Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 6MBI100VW-120-50 Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols I CES I GES VGE (th) VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Thermistor Resistance B value trr R B I F = 100A I F = ±20 T = 25°C T = 100°C T = 25 / 50°C Conditions VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, I C = 100mA Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 100A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V I C = 100A VCC = 600V I C = 100A VGE = +15 / -15V RG = 1.6Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IGBT Modules I F = 100A Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.20 2.65 2.50 2.55 1.75 2.20 2.05 2.10 9.1 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.30 2.75 2.55 2.50 1.85 2.15 2.10 2.05 0.1 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) (*4) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. 0.29 0.55 0.05 Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic 2 6MBI100VW-120-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 200 VGE=20V 15V 200 12V VGE=20V IGBT Modules [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150oC / chip 15V 12V Collector current: IC [A] Collector current: IC [A] 150 150 100 10V 100 10V 50 8V 0 0 50 8V 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25o C / chip 8 Collector current: IC [A] 150 125°C Collector - Emitter voltage: VCE [V] Tj=25°C 150°C 6 100 4 50 2 Ic=200A Ic=100A Ic= 50A 0 0 0 1 2 3 4 5 5 10 15 20 25 Collector-Emitter voltage: VCE[V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25oC Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 100.0 Gate - Emitter voltage: VGE [V] [ Inverter ] Dynamic gate charge (typ.) Vcc=600V， Ic=100A，Tj= 25°C Capacitance: Cies, Coes, Cres [nF] 10.0 Cies VGE 1. 0 Cres Coes VCE 0. 1 0 10 20 30 40 0 250 500 750 1000 Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC] 3 6MBI100VW-120-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=1.6Ω，Tj= 125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=1.6Ω，Tj= 150°C 10000 1000 t of f ton tr 1000 t of f ton tr 100 tf 100 tf 10 0 50 100 150 200 250 10 0 50 Collector current: IC [A] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V，Ic=100A，VGE=±15V，Tj= 125°C Switching time : ton, tr, toff, tf [ nsec ] 10000 Collector current: IC [A] 100 150 200 250 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V，VGE=±15V，Rg=1.6Ω Switching loss : Eon, Eoff, Err [mJ/pulse ] 30 Eon(150°C) Eon(125°C) 20 Eoff(150°C) Eoff(125°C) Err(150°C) Err(125°C) 1000 t of f ton tr 100 tf 10 10 0. 1 1. 0 10.0 100.0 0 0 50 100 150 200 250 Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V，Ic=100A，VGE=±15V Switching loss : Eon, Eoff, Err [mJ/pulse ] 30 Collector current: IC [A] [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.6Ω ,Tj