6MBI150U4B-120

SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 6MBI150U4B-120 MS5F 6013 Jan. 18 ’05 Jan. 18 ’05 S .Miyashita T.Miyasak a Y.Seki K.Yamada MS 5 F 6 0 1 3 1 13 H04-004-07b Revised Date Classification Ind. Content Records Applied date Issued date Drawn Checked Checked Approved J an.- 18 - ’05 Enactment T.Miyasaka K . Yam ad a Y.S eki MS 5 F 6 0 1 3 2 13 H04-004-06b 6MBI150U4B-120 1. Outline Drawing ( Unit : mm ) ( 2. Equiv alent circuit sho ws the ore tic al dimen sion . ) sho ws refe re nc e dime nsio n. 30,31 ,32 16,17 ,18 19 20 1 2 U 27,28 ,29 3 4 33,34 ,35 5 6 9 10 V 24,25 ,26 W 21,22 ,23 7 8 11 12 13,14 ,15 MS 5 F 6 0 1 3 3 13 H04-004-03a 3. Ab s o l u t e Max i m u m Rat i n g s ( at T c = 25 C u n l es s o t h er w i s e s p ec i f i ed ) It em s Collector-Em itter voltage Gate-Em itter voltage Sym b o l s VCES VGES Ic Collector current I cp -I c -Ic pulse Pc Tj Tstg Continuous 1m s Tc=25 C o Tc=80 C o Tc=25 C o Tc=80 C o o Co n d i t i o n s 1m s Collector Power Dissipation 1 device Junction tem perature Storage tem perature Isolation between term inal and copper base (*1) Viso AC : 1m in. 2500 VAC voltage between therm istor and others (*2) Screw Mounting (*3) 3.5 Nm Torque (*1) All term inals should be connected together when isolation test will be done. (*2) Two therm istor term inals should be connected together, each other term inals should be connected together and shorted to base plate when isolation test will be done. (*3) Recom m endable Value : 2.5 to 3.5 Nm (M5) o M ax i m u m Un i t s Rat i n g s 1200 V ±20 V 200 150 400 A 300 150 300 735 W +150 o C -40 to +125 4. El ec t r i c al c h ar ac t er i s t i c s ( at T j = 25 C u n l es s o t h er w i s e s p ec i f i ed ) It em s Zero gate voltage collector current Gate-Em itter leakage current Gate-Em itter threshold voltage Collector-Em itter saturation voltage Sym b o l s ICES IGES VGE(th) VCE(sat) (term inal) VCE(sat) (chip) Cies ton tr t r(i ) toff tf VF (term inal) VF (chip) t rr R lead R o Co nd i t i o n s VCE=1200V VGE=0V VCE=0V VGE=±20V VCE=20V Ic=150m A Ic=150A VGE=15V m i n. 4.5 o Ch ar ac t er i s t i c s t yp . m ax . 6.5 2.45 2.65 1.90 2.10 17 0.32 0.10 0.03 0.41 0.07 2.20 2.30 1.65 1.75 3.40 5000 495 3375 1.0 200 8.5 2.60 2.05 1.20 0.60 1.00 0.30 2.35 1.80 0.35 520 3450 Un i t s mA nA V Inverter Input capacitance Turn-on tim e Turn-off tim e Tj=25 C o Tj=125 C o Tj=25 C o Tj=125 C VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=150A VGE=±15V RG=2.2Ω IF=150A VGE=0V Tj=25 C o Tj=125 C o Tj=25 C o Tj=125 C o Forward on voltage Reverse recovery tim e Lead resistance, term inal-chip (*4) Thermistor IF=150A 465 3305 V nF us V us mΩ Ω K T=25 C o T=100 C o B value B T=25/50 C (*4) Biggest internal term inal resistance am ong arm . Resistance MS 5 F 6 0 1 3 4 13 H04-004-03a 5. T h er m al r es i s t an c e c h ar ac t er i s t i c s It em s Therm al resistance(1device) Sym b o l s Rth(j-c) IGBT FW D Co n d i t i o n s m i n. Ch ar ac t er i s t i c s t yp . m ax . 0.17 0.28 Un i t s o Contact Therm al resistance Rth(c-f) with Therm al Com pound 0.05 (1 device) (*5) (*5) This is the value which is defined m ounting on the additional cooling fin with therm al com pound. C/W 6. In d i c at i o n o n m o d u l e L o g o o f p ro d u cti o n 6M BI 150U4B-120 150A 1200V L o t .No . 7. Ap p l i c ab l e c at eg o r y Pl ac e o f m an u f ac t u r i n g (c o d e) This specification is applied to IGBT-Module nam ed 6MBI150U4B-120. 8. St o r ag e an d t r an s p o r t at i o n n o t es • The m odule should be stored at a standard tem perature of 5 to 35oC and hum idity of 45 to 75% . • Store m odules in a place with few tem perature changes in order to avoid condensation on the m odule surface. • Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the m odule. • Store m odules with unprocessed term inals. • Do not drop or otherwise shock the m odules when transporting. 9. Def i n i t i o n s o f s w i t c h i n g t i m e ～ ～ 90% 0V L 0V V GE tr r Ir r 9 0% ～ ～ VCE V cc Ic 9 0% RG V GE V CE Ic 0V 0A tr ( i ) tr to n to f f ～ ～ Ic 10% 10% VCE tf 10% 10. Pac k i n g an d L ab el i n g Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS 5 F 6 0 1 3 5 13 H04-004-03a 11. Reliability test results Rel i ab i l i t y Tes t It em s Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time Test methods and conditions : : : : 20N 10±1 sec. 2.5 ~ 3.5 N･m (M5) 10±1 sec. Ref erence Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1) (Aug.-2001 edit ion) Test Method 401 MethodⅠ Test Method 402 methodⅡ Test Method 403 Ref erence 1 Condi tion code B 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Range of f requency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 235±5 ℃ Immersion time : 5±0.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 260±5 ℃ Immersion time : 10±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±2 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 120±2 ℃ Test humidity : 85±5% Test duration : 96hr. Test temp. : Low temp. -40±5 ℃ High temp. 125 ±5 ℃ RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100 +0 -5 5 (0:1) Mechanical Tests Test Method 404 Condi tion code B 5 (0:1) Test Method 303 Condi tion code A 5 (0:1) Test Method 302 Condi tion code A 5 (0:1) Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 5 5 5 (0:1) (0:1) (0:1) 5 (0:1) Environment Tests 5 Temperature Cycle 5 (0:1) Dwell time Number of cycles 6 Thermal Shock Test temp. ℃ Low temp. 0 ℃ Used liquid : W ater with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles +5 -0 Test Method 307 method Ⅰ Condi tion code A 5 (0:1) MS 5 F 6 0 1 3 6 13 H04-004-03a Rel i ab i l i t y Tes t It em s Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Ref erence Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1) (Aug.-2001 edit ion) Test Method 101 Test temp. Bias Voltage Bias Method Endurance Turas ce Tests En d e s t n Test duration 2 High temperature Bias (f or gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles : Ta = 125±5 ℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test Method 101 5 (0:1) : Ta = 125±5 ℃ (Tj ≦ 150 ℃) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 85±2 oC 85±5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=100±5 deg Tj ≦ 150 ℃, Ta=25±5 ℃ 15000 cycles Test Method 102 Condi tion code C 5 (0:1) 4 Intermitted Operating Lif e (Power cycle) ( for IGBT ) Test Method 106 5 (0:1) Fai l u r e Cr i t er i a Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSL×0.8 USL×2 USL×2 USL×1.2 USL×1.2 USL×1.2 USL×1.2 mA A mA V V mV mV Note Electrical Leakage current ICES characteristic ±IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FW D VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others USL×1.2 Broken insulation The visual sample LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal f rom the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely bef ore the measurement. MS 5 F 6 0 1 3 7 13 H04-004-03a Rel i ab i l i t y Tes t Res u l t s Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 MethodⅠ Test Method 402 methodⅡ Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Ⅰ Condition code A Test items 1 Terminal Strength (Pull test) 2 Mounting Strength 5 5 5 5 5 5 5 5 5 5 5 5 0 0 0 0 0 0 0 0 * 0 0 0 Mechanical Tests Environment Tests 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock 1 High temperature Reverse Bias Test Method 101 5 5 5 5 * 0 * 0 Endurance Tests 2 High temperature Bias ( f o r g a te ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 101 Test Method 102 Condition code C Test Method 106 * under confirm ation MS 5 F 6 0 1 3 8 13 H04-004-03a Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip 400 400 Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip Collector current : Ic [ A ] 300 Collector current : Ic [A ] VGE=20V 15V 12V 300 VGE=20V 15V 12V 200 10V 100 200 10V 100 8V 8V 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 400 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip 300 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [ A ] Tj=25oC Tj=125oC 8 6 200 4 Ic=300A Ic=150A Ic=75A 100 2 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 5 10 15 20 Gate-Emitter voltage : VGE [ V ] 25 Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25 C 100.0 o Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj=25oC Cies 10.0 Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] VG E Cres 1.0 Coes VC E 0 0 200 400 600 Gate charge : Qg [ nC ] 800 0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 MS 5 F 6 0 1 3 9 13 H04-004-03a Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.2Ω, Tj=25oC 10000 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.2Ω, Tj=125oC Switching time : ton, tr, toff, tf [ nsec ] 1000 toff ton 100 Switching time : ton, tr, toff, tf [ nsec ] 1000 ton toff tr 100 tf tr tf 10 0 50 100 150 200 Collector current : Ic [ A ] 250 10 0 50 100 150 200 Collector current : Ic [ A ] 250 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj=25oC 10000 25 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=2.2Ω Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 1000 ton toff tr 20 Eoff(125oC) Eon(125oC) 15 Err(125oC) Eoff(25oC) Eon(25oC) Err(25oC) 100 tf 10 5 10 1 10 100 Gate resistance : RG [ Ω ] 1000 0 0 50 100 150 200 Collector current : Ic [ A ] 250 300 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj=125oC 50 Reverse bias safe operating area (max.) +VGE=15V, -VGE = 2.2Ω, Tj