6MBI150VX-060-50

6MBI150VX-060-50 IGBT MODULE (V series) 600V / 150A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Tjop Tc Tstg AC : 1min. M5 Conditions Maximum ratings 600 ±20 150 300 150 300 485 175 150 125 -40 to +125 2500 3.5 VAC Nm Units V V A W Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Collector power dissipation Junction temperature Operating junciton temperature (under switching conditions) Case temperature Storage temperature Isolation voltage Screw torque °C between terminal and copper base (*1) Viso between thermistor and others (*2) Mounting (*3) - Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 6MBI150VX-060-50 Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols I CES I GES VGE (th) VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Thermistor Resistance B value trr R B I F = 150A I F = ±20 T = 25°C T = 100°C T = 25 / 50°C Conditions VGE = 0V, VCE = 600V VGE = 0V, VGE = ±20V VCE = 20V, I C = 150mA Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 150A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V I C = 100A VCC = 300V I C = 150A VGE = +15 / -15V R G = 9Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IGBT Modules I F = 150A Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 2.40 2.85 2.70 2.90 1.60 2.05 1.90 2.10 9.7 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.40 2.85 2.30 2.30 1.60 2.05 1.50 1.47 0.35 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) (*4) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. 0.31 0.60 0.05 Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] 2 6MBI150VX-060-50 Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 300 VGE=20V 300 12V IGBT Modules [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150oC / chip VGE=20V 15V 12V Collector current: IC [A] Collector current: IC [A] 15V 200 10V 200 10V 100 8V 0 0 1 2 3 4 5 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE =15V / chip 300 Collector-Emitter voltage: VCE [V] [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip 8 125°C Collector - Emitter voltage: VCE [V] Tj=25°C 150°C Collector current: IC [A] 6 200 4 100 2 Ic=300A Ic=150A Ic= 75A 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage: VCE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25oC 100.0 Gate - Emitter voltage: VGE [V] [ Inverter ] Dynamic gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25°C Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] Capacitance: Cies, Coes, Cres [nF] 10.0 Cies VGE 1. 0 Coes Cres VCE 0. 1 0 10 20 30 40 0 200 400 600 800 1000 Collector - Emitter voltage: VCE [V] Gate charge: Qg [nC] 3 6MBI150VX-060-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9Ω, Tj= 125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 10000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9Ω, Tj= 150°C 1000 t of f tr 100 ton 1000 ton tr t of f 100 tf tf 10 0 100 200 300 400 10 0 100 200 300 400 Collector current: IC [A] [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 t of f ton tr 1000 12 10 8 6 4 2 0 0 Collector current: IC [A] [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9Ω Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) 100 tf Err(150°C) Err(125°C) 50 100 150 200 250 300 10 1. 0 10.0 100.0 1000.0 Gate resistance : Rg [Ω] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300V, Ic=150A, VGE=±15V Switching loss : Eon, Eoff, Err [mJ/pulse ] 40 Eoff(150°C) Eoff(125°C) Collector current: IC [A] [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 9Ω ,Tj