6MBI35S-140

6MBI35S-140 IGBT MODULE ( S series) 1400V / 35A 6 in one-package Features · Compact Package · P.C.Board Mount Module · Low VCE(sat) IGBT Modules Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A 1(Gu) 2(Eu) 6(Ev) Equivalent Circuit Schematic 13(P) 5(Gv) 9(Gw) 10(Ew) A A W °C °C V N·m 16(U) 7(Gy) 3(Gx) 4(Ex) 8(Ey) 15(V) 14(W) 11(Gz) 12(Ez) 17(N) *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. – – – – 5.5 7.2 – 2.4 – 3.0 – 4200 – 875 – 770 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.6 – 2.2 – – Conditions Max. 1.0 0.2 8.5 2.75 – – – – 1.2 0.6 – 1.0 0.3 3.4 – 0.35 VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=35mA Tj=25°C VGE=15V, IC=35A Tj=125°C VGE=0V VCE=10V f=1MHz VCC =800V IC=35A VGE=±15V RG=33Ω Tj=25°C Tj=125°C IF=35A IF=35A, VGE=0V Unit mA µA V V pF µs Turn-off time Diode forward on voltage Reverse recovery time V µs Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.05 Conditions Max. 0.52 0.90 – IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6 MBI35S-140 Characteristics [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 80 15V 12V VGE= 20V 80 IGBT Module [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) VGE= 20V 15V 12V 60 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 10V 40 10V 40 20 20 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 8V 5 Collector - Emitter voltage : VCE [ V ] 80 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Tj= 25°C Tj= 125°C [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 10 8 60 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 6 40 4 Ic= 70A 2 Ic= 35A Ic= 17.5A 20 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C 25 800 20 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 600 15 1000 Coes 400 10 200 5 Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 100 200 Gate charge : Qg [ nC ] 300 0 400 Gate - Emitter voltage : VGE [ V ] Cies 6 MBI35S-140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr 100 tf 50 0 20 40 60 Collector current : Ic [ A ] 100 tf 50 0 20 40 60 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 25°C 5000 14 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=33ohm Eon(125°C) 12 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10 Eon(25°C) 8 Eoff(125°C) Eoff(25°C) 4 Err(125°C) 2 Err(25°C) 1000 500 toff 6 ton 100 tr tf 50 10 0 50 100 500 0 20 40 60 Gate resistance : Rg [ohm] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 125°C 25 Eon 100 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=33ohm, Tj=