6MBI450V-120-50

http://www.fujisemi.com 6MBI450V-120-50 IGBT MODULE (V series) 1200V / 450A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Inverter Symbols VCES VGES Ic Icp -Ic -Ic pulse Pc Tj Top Tstg Conditions Maximum ratings 1200 ±20 450 900 450 900 2250 175 150 -40 to +125 2500 3.5 4.5 Units V V Collector current Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C A Collector power dissipation Junction temperature Operation temperature Storage temperature Isolation voltage Screw torque W °C between terminal and copper base (*1) Viso between thermistor and others (*2) Mounting (*3) Terminals (*4) - AC : 1min. VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6) 1 6MBI450V-120-50 Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols ICES IGES VGE (th) VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Thermistor Resistance B value trr R B VGE = 0V IF = 450A IF = 450A T = 25°C T = 100°C T = 25 / 50°C Conditions VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, IC = 450mA Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C IC = 450A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VGE = 15V IC = 450A VCC = 600V IC = 450A VGE = +15V RG = 0.52Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C IGBT Modules http://www.fujisemi.com Turn-off time VGE = 0V IF = 450A Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.30 2.75 2.60 2.65 1.75 2.20 2.05 2.10 41 550 1200 180 600 120 1050 2000 110 350 2.25 2.70 2.40 2.35 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs V µs Ω K Thermal resistance characteristics Items Thermal resistance (1device)(*5) Contact thermal resistance (1device) (*6) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. 0.066 0.100 0.0167 Units °C/W Note *5: This value is including margins. This will be revised in future. Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] 2 6MBI450V-120-50 Characteristics (Representative) [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1000 15V 800 Collector current: Ic [A] Vge=20V 600 10V Collector current: Ic [A] 12V 800 IGBT Modules http://www.fujisemi.com [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1000 Vge= 20V 15V 12V 600 10V 400 400 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: Vce [V] 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: Vce [V] [INVERTER] Collector current vs. Collector-Emitter v oltage (typ.) Vge= 15V / chip 1000 125°C 800 Collector Current: Ic [A] Tj=25°C 150°C 400 Collector-Emitter Voltage: Vce [V] 8 [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 600 6 4 Ic=900A Ic=450A Ic=225A 5 10 15 20 25 200 2 0 0 1 2 3 4 5 Collector-Emitter Voltage: Vce [V] 0 Gate-Emitter Voltage: Vge [V] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, ƒ= 1MHz, Tj= 25°C Gate Capacitance: Cies, Coes, Cres [nF] *** Collector-Emitter voltage: Vce [200V/div] Gate-Emitter voltage: Vge [5V/div] 1000 [INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=450A, Tj= 25°C 100 Cies Vge Vce 10 Coes Cres 1 0 10 20 30 0 1000 2000 3000 4000 5000 6000 Collector-Emitter voltage: Vce [V] Gate charge: Qg [nC] 3 6MBI450V-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=0.52Ω, Tj=25°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=0.52Ω, Tj=125°C, 150°C 10000 Tj=125oC Tj=150oC 1000 toff ton tr 100 tf 1000 toff ton tr 100 tf 10 0 200 400 600 800 1000 10 0 200 400 600 800 1000 Collector current: Ic [A] Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=450A, Vge=±15V, Tj=25°C toff ton 1000 tr Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 Switching time: ton, tr, toff, tf [nsec] [INVERTER] Switching loss vs. Collector current ( typ.) Vcc=600, Vge=±15V, Rg=0.52Ω, Tj=125°C, 150°C 150 Tj=125oC Tj=150oC 100 Eoff tf 100 50 Err Eon 0 0 200 400 600 800 1000 10 0.1 1 10 100 Gate resistance: Rg [Ω] Collector current: Ic [A] [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=450A, Vge=±15V, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 250 Tj=125oC Tj=150oC Eon Collector current: Ic [A] [INVERTER] Reverse bias safe operating area (max.) +Vge=15V, -Vge≤15V, Rg≥0.52Ω, Tj=150°C 1400 1200 1000 800 600 400 200 0 200 150 Eoff 100 50 Err 0 0 1 10 100 Gate resistance: Rg [Ω] 0 500 1000 1500 Collector-Emitter voltage: Vce [V] 4 6MBI450V-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] Forward Current vs. Forward Voltage (typ.) chip 1000 Tj=25°C Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=0.52Ω, Tj=25°C 10000 800 Forward current: If [A] 1000 Irr 600 400 125°C 200 150°C 0 0 1 2 3 Forward on voltage: Vf [V] 100 trr 10 0 200 400 600 800 1000 Forward current: If [A] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=0.52Ω, Tj=125°C, 150°C 10000 Thermal resistanse: Rth(j-c) [°C/W] ** Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=125oC Tj=150oC 1000 Irr trr 100 Transient Thermal Resistance (max.) 1 0.1 FWD IGBT 0.01 10 0 200 400 600 800 1000 Forward current: If [A] 0.001 0.001 0.01 0.1 1 Pulse Width : Pw [sec] [THERMISTOR] Temperature characteristic (typ.) 1 00 Resistance : R [kΩ] 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temperature [°C] 5 6MBI450V-120-50 Outline Drawings, mm IGBT Modules http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Systems Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Systems Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Systems Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 6