6MBI50S-140_01

6MBI50S-140 IGBT MODULE ( S series) 1400V / 50A 6 in one-package Features · Compact Package · P.C.Board Mount Module · Low VCE(sat) IGBT Modules Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 75 50 150 100 50 100 360 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W °C °C V N·m Equivalent Circuit Schematic *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. – – – – 5.5 7.2 – 2.4 – 3.0 – 6000 – 1250 – 1100 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.6 – 2.2 – – Conditions Max. 1.0 0.2 8.5 2.75 – – – – 1.2 0.6 – 1.0 0.3 3.4 – 0.35 VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=50mA Tj=25°C VGE=15V, IC=50A Tj=125°C VGE=0V VCE=10V f=1MHz VCC =800V IC=50A VGE=±15V RG=24Ω Tj=25°C Tj=125°C IF=50A IF=50A, VGE=0V Unit mA µA V V pF µs Turn-off time Diode forward on voltage Reverse recovery time V µs Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.05 Conditions Max. 0.35 0.75 – IGBT FWD the base to cooling fin °C/W °C/W °C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6 MBI50S-140 Characteristics [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 120 120 IGBT Module [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 100 15V VGE= 20V 12V 100 VGE= 20V 15V 12V Collector current : Ic [ A ] 80 10V 60 Collector current : Ic [ A ] 80 10V 60 40 40 20 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 20 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 100 Tj= 25°C Tj= 125°C 80 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 60 4 Ic= 100A 2 Ic= 50A Ic= 25A 40 20 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 20000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25°C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 800 20 600 15 1000 Coes 400 10 Cres 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 100 200 300 400 Gate charge : Qg [ nC ] 0 500 6 MBI50S-140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 24ohm, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 24ohm, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton tr ton tr 100 100 tf tf 50 0 20 40 Collector current : Ic [ A ] 60 80 50 0 20 40 Collector current : Ic [ A ] 60 80 [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=±15V, Tj= 25°C 5000 20 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=24ohm Eon(125°C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton toff 18 16 Eon(25°C) 14 12 Eoff(125°C) 10 8 6 4 2 Err(125°C) Err(25°C) Switching time : ton, tr, toff, tf [ nsec ] tr 1000 500 Eoff(25°C) 100 tf 50 10 0 50 100 500 0 20 40 60 80 100 Gate resistance : Rg [ohm] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=50A, VGE=±15V, Tj= 125°C 40 Eon 120 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 100 30 80 20 60 Eoff 10 40 20 Err 0 10 0 50 100 500 0 200 400 600 800 1000 1200 1400 1600 Gate resistance : Rg [ohm] 6 MBI50S-140 IGBT Module Forward current vs. Forward on voltage (typ.) 120 300 Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=24ohm 100 Tj=125°C Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(125°C) 100 trr(25°C) Forward current : IF [ A ] 80 60 Irr(125°C) 40 Irr(25°C) 20 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 20 40 Forward current : IF [ A ] 60 80 Transient thermal resistance 3 1 Thermal resistanse : Rth(j-c) [ °C/W ] FWD 0.1 0.01 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] M623 Outline Drawings, mm 107.5±1 4-ø6.1±0.3 2-ø5.5±0.3 16.02 17 93±0.3 15.24 15.24 15.24 15.24 13 69.6±0.3 ø2.6±0.1 27.6±0.3 32±0.3 41.91 45±1 + 0.5 0 3 93±0.3 A A 1.15±0.2 ø2.25±0.1 Section A-A ø0.4 12 11 1 3.81 3.5±0.5 1.5±0.3 16.02 11.43 11.43 11.43 11.43 11.43 20.5±1 2.5±0.3 17±1 6.5±0.5 1±0.2 0.8±0.2 Shows theory dimensions 12