6MBP200RA060

6MBP200RA060 IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 200A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol Rating Min. VDC VDC(surge) VSC VCES DC IC 1ms ICP Duty=57.8% -IC Collector power dissipation One transistor PC Junction temperature Tj Input voltage of power supply for Pre-Driver VCC *1 Input signal voltage Vin *2 Input signal current Iin Alarm signal voltage VALM *3 Alarm signal current IALM *4 Storage temperature Tstg Operating case temperature Top Isolating voltage (Case-Terminal) Viso *5 Screw torque Mounting (M5) Terminal (M5) 0 0 200 0 0 0 0 -40 -20 Max. 450 500 400 600 200 400 200 735 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V A A A W °C V V mA V mA °C °C kV N·m N·m Unit Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF Condition VCE=600V input terminal open Ic=200A -Ic=200A Min. – – – Typ. – – – Max. 1.0 2.8 3.0 Unit mA V V 6MBP200RA060 Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM IGBT-IPM Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100°C *7 6 32 fsw=0 to 15kHz Tc=-20 to 100°C *7 18 96 ON 1.00 1.35 1.70 OFF 1.70 2.05 2.40 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125°C 300 Tj=25°C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25°C Fig.3 12 1425 1500 1575 Unit mA mA V V V °C °C °C °C A µs V V ms µs ohm Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=200A, VDC=300V IF=200A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Unit µs µs µs Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.17 0.36 Unit °C/W °C/W °C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 400 16.5 20 3.0 3.0 Unit V V V N·m N·m 6MBP200RA060 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 6MBP200RA060 Characteristics (Representative) Control circuit IGBT-IPM Power supply current vs. Switching frequency Tj=100°C 80 Power supply current : Icc (mA) Input signal threshold voltage : Vin(on),Vin(off) (V) 70 60 50 40 30 20 10 0 0 5 10 15 20 Switching frequency : fsw (kHz) 25 Vcc=17V Vcc=15V Vcc=13V P-side N-side Vcc=17V Vcc=15V Vcc=13V 2.5 3 Input signal threshold voltage vs. Power supply voltage Tj=25°C Tj=125°C } Vin(off) 2 1.5 1 0.5 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 } Vin(on) Under voltage vs. Junction temperature 14 12 10 8 6 4 2 0 20 40 60 80 100 120 Junction temperature : Tj (°C) 140 Under voltage hysterisis : VH (V) Under voltage hysterisis vs. Jnction temperature 1 Under voltage : VUVT (V) 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 Junction temperature : Tj (°C) 140 Alarm hold time vs. Power supply voltage 3 Over heating protection : TcOH,TjOH (°C) 200 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Alarm hold time : tALM (mSec) OH hysterisis : TcH,TjH (°C) 2.5 Tj=125°C 2 Tj=25°C 1.5 1 0.5 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 TjOH 150 TcOH 100 50 TcH,TjH 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 6MBP200RA060 Inverter IGBT-IPM C o lle cto r c u rren t v s. C o lle cto r-Em itter vo lta ge Tj= 2 5°C 3 50 V c c= 1 5V 3 00 C ollec to r C u rre nt : Ic (A ) 2 50 2 00 1 50 1 00 50 0 0 0 .5 1 1 .5 2 2 .5 3 3 .5 C o lle cto r-E m itte r vo lta g e : V ce (V ) V c c= 1 7V V c c= 1 3V 300 Collector Current : Ic (A) 250 350 Collector current vs. Collector-Emitter voltage Tj=125°C Vcc=15V Vcc=17V Vcc=13V 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25°C 10000 Switching time : ton,toff,tf (nSec) 10000 toff 1000 ton Switching time : ton,toff,tf (nSec) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125°C toff ton 1000 tf tf 100 100 10 0 50 100 150 200 250 Collector current : Ic (A) 300 350 10 0 50 100 150 200 250 Collector current : Ic (A) 300 350 Forward current vs. Forward voltage 350 300 125°C Forward Current : If (A) 250 25°C 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 Forward voltage : Vf (V) 1000 Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) R e v erse rec ov e ry c ha ra c teristics trr,Irr v s. IF trr125°C trr25°C Irr125°C Irr25°C 100 10 0 50 100 150 200 250 300 350 Forward current : IF(A) 6MBP200RA060 IGBT-IPM Transient thermal resistance 1 Thermal resistance : Rth(j-c) (°C/W) 2000 1800 Collector current : Ic (A) FWD IGBT 0.1 1600 1400 1200 1000 800 600 400 200 0.01 0.001 0.01 0.1 1 Pulse width :Pw (sec) 0 0 Reversed biased safe operating area Vcc=15V,Tj < 125°C = SCSOA (non-repetitive pulse) RBSOA (Repetitive pulse) 100 200 300 400 500 600 700 Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 800 Collecter Power Dissipation : Pc (W) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (°C) Collecter Power Dissipation : Pc (W) 350 300 250 200 150 100 50 0 0 20 P o w e r d e ra tin g for F W D (pe r d ev ic e ) 40 60 80 100 120 140 160 Case Temperature : Tc (°C) Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 15 Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25°C Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=125°C 15 Eon 10 10 Eon 5 Eoff Err 0 0 50 100 150 200 Collector current : Ic (A) Eoff 5 Err 0 0 50 100 150 Collector current : Ic (A) 200 6MBP200RA060 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V 800 Over current protection level : Ioc(A) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(°C)