6MBP50TEA120

6MBP50TEA120 Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 50A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) V SC VCES IC ICP -IC PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 400 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 50 100 50 287 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA °C °C °C °C V N·m Collector-Emitter voltage *1 Collector current Inverter DC 1ms DC Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.44=287W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 6 MBP50TEA120 Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=50A Terminal Chip -Ic=50A Terminal Chip VDC=600V,Tj=125°C IC=50A Fig.1, Fig.6 VDC=600V, IF=50A Fig.1, Fig.6 Min. 1.2 Typ. 2.2 1.6 - IGBT-IPM Max. 1.0 3.1 2.0 3.6 0.3 Unit mA V V µs Turn-on time Turn-off time Reverse recovery time Inverter Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Frequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 15 45 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Current limit resistor RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH V UV VH Condition Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. 75 150 11.0 0.2 Typ. 5 20 0.5 Max. 8 12.5 Unit A µs µs °C °C V V Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *9 Case to fin thermal resistance with compound *9 : (For 1 device, Case is under the device) Inverter IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.44 0.86 Unit °C/W °C/W °C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating Min. ±2.0 ±5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol V DC V CC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 270 Max. Unit g 6 MBP50TEA120 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic I ALM Ic I ALM Ic I ALM Figure.4 Definition of tsc Vcc 20 k DC 15V HCPL 4504 P P IPM IPM L + + DC 300V 600V Vin GND VccU DC 15V SW1 20k P IPM U V CT N Ic VinU GNDU Vcc 20k VinX SW2 Figure 6. Switching Characteristics Test Circuit AC200V AC400V + Icc A Vcc P IPM Vin P.G +8V fsw GND N V W U DC 15V W 4700p GND N Noise DC 15V Earth Cooling Fin Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6 MBP50TEA120 Block diagram P VccU VinU AL MU GNDU Vcc V VinV AL MV GNDV VccW VinW AL MW GNDW Vcc VinX 4 3 2 IGBT-IPM Pre- Driver R ALM 1.5k 1 Vz U 8 7 6 Pre- Driver R ALM 1.5k 5 Vz V 12 11 10 Pre- Driver R ALM 1.5k 9 Vz W 14 16 Pre- Driver Vz GND 13 VinY 17 Pre- Driver Vz Pre-drivers include following functions 1.Amplifier for driver Pre- Driver VinZ 18 Vz 2.Short circuit protection 3.Under voltage lockout circuit NC B 4.Over current protection 5.IGBT chip over heating protection VinDB AL M 15 19 NC R ALM 1.5k N Outline drawings, mm Package type : P622 Dimensions in mm M BCFM Mass : 270g 6MBP50TEA120 Characteristics Control circuit characteristics (Representative) IGBT-IPM Power supply current vs. Switching frequency Tc=125°C (typ.) 50 Power supply current : Icc (mA) Input signal threshold voltage : Vin(on),Vin(off) (V) P-side N-side Vcc=17V Vcc=15V Vcc=13V Input signal threshold voltage vs. Power supply voltage (typ.) 2.5 Tj=25°C Tj=125°C 40 2 } Vin(off) 1.5 30 } Vin(on) 20 Vcc=17V Vcc=15V Vcc=13V 1 10 0.5 0 0 5 10 15 20 Switching frequency : fsw (kHz) 25 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 Under voltage vs. Junction temperature (typ.) 14 12 10 8 6 4 2 0 20 Under voltage hysterisis : VH (V) 40 60 80 100 120 140 Under voltage hysterisis vs. Jnction temperature (typ.) 1 Under voltage : VUVT (V) 0.8 0.6 0.4 0.2 0 20 Junction temperature : Tj (°C) 40 60 80 100 120 Junction temperature : Tj (°C) 140 Alarm hold time vs. Power supply voltage (typ.) 3 Over heating protection : TjOH (°C) OH hysterisis : TjH (°C) Alarm hold time : tALM (mSec) 2.5 Tc=100°C 2 1.5 1 0.5 0 12 Tc=25°C 200 Over heating characteristics TjOH,TjH vs. Vcc (typ.) TjOH 150 100 50 TjH 0 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) 13 14 15 16 17 Power supply voltage : Vcc (V) 18 6 MBP50TEA120 Main circuit characteristics (Representative) IGBT-IPM Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / Chip 100 Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / Terminal 100 Collector Current : Ic (A) Collector Current : Ic (A) 80 Vcc=17V Vcc=15V 80 Vcc=15V 60 60 Vcc=17V Vcc=13V Vcc=13V 40 40 20 20 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / Chip 100 Collector Current : Ic (A) Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / Terminal 100 Collector Current : Ic (A) 80 Vcc=17V Vcc=15V 80 Vcc=17V Vcc=15V 60 60 Vcc=13V Vcc=13V 40 40 20 20 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Forward current vs. Forward voltage (typ.) Chip 100 Forward current vs. Forward voltage (typ.) Terminal 100 Forward Current : If (A) 25°C 60 125°C Forward Current : If (A) 80 80 25°C 60 125°C 40 40 20 20 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) 6 MBP50TEA120 IGBT-IPM Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25° C Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 20 Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125°C 20 Eon 15 15 Eon 10 10 5 Eoff Err Eoff 5 Err 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Collector current : Ic (A) R e ve rs ed bias ed sa fe ope ra ting a re a Vc c=1 5V, Tj