6R1MBI75P-160

6R1MBi75P-160 Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Diode Module Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol V RRM V RSM IO IFSM I2t Tj VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Operation junction temperature Storage junction temperature Isolation voltage Mounting screw torque PC V RRM Tj Tstg Viso 50Hz/60Hz sine wave Tc=115°C From rated load From rated load Condition Rating 1600 1760 75 600 1440 -40 to +125 1400 ±20 50 35 100 70 240 1400 +150 -40 to +125 3000 2.0 to 2.5 Unit V V A A A 2s °C V V A A W V °C °C V N·m Converte DC 1ms 1 device Electrical characteristics (Tj=25°C unless otherwise specified) Item Co. Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 AC : 1 minute M5 screw 保led befor new u Min. e 廃soletdesign. 守 ob Tc=25°C Tc=75°C Tc=25°C Tc=75°C 予n marc 止o 0 機種7. 20 定h Brake o NSymbol V FM Condition Typ. Turn-off time Reverse current IRRM ICES IGES VCE(sat) ton tr toff tf IRRM Tj=25°C, IFM=75A Tj=150°C, VR=VRRM VGE=0V. V CE=1400V VCE =0V. VGE=±20V VGE=15V. IC=35A Vcc=800V Ic=35A VGE=±15V RG=33ohm 2.4 0.35 0.25 0.45 0.08 Max. 1.35 15 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0 Unit V mA mA nA V µs Brake mA Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. Max. 0.16 0.96 0.70 0.08 Unit °C/W Thermal Resistance(Case to fine) Rth(c-f) °C/W Diode Module Forward Characteristics 250 6R1MBi75P-160 O utp ut C urre nt - T o ta l L o s s 80 max 70 typ 200 Forward Current IF (A ) 60 50 40 30 20 50 150deg 25deg Total Loss (W) 1.4 150 100 10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0 20 40 60 80 Forward Voltage O u t p u t C u rre n t Io (A ) O u tp u t C u r re n t - C a s e T e m p e ra tu r e 130 S u rg e C u rre n t 700 120 600 Case Temperature Tc(deg.C) 110 Peak Surge Current IFSM(A) 500 100 400 90 80 70 60 50 0 Transient Thermal Impedance 1 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 20 40 60 80 保led befor new u 100 0 0 .0 1 10 e 廃soletdesign. 守 ob 200 0 .1 300 予n marc 止o T im e 0 機種7. 20 定h 1 O u t p u t C u rre n t Io ( A ) No [ B ra ke ] Tra nsie nt The rm a l Im p e d a nce FW D Zth(j-c)(t) (deg.C/W) Zth(j-c)(deg.C/W) 0.1 1 IG BT 0.01 0.1 0.001 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 Tim e ( ) Tim e (s ec ) Diode Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 80 VGE= 20V 15V 12V 80 6R1MBi75P-160 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) VGE= 20V 15V 12V 60 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 10V 40 10V 40 20 20 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 8V 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 80 Tj= 25°C Tj= 125°C 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 60 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 40 20 0 0 10000 2h T [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 3月 7年 00 1 2 3 4 Collector - Emitter voltage : VCE [ V ] e w d b or ne le du nd f e sch me is ct recom odu ot r N is p 0 5 5 10 1000 Cies 保 e 廃soletdesign. 守 ob 4 2 15 20 予n marc 止o Ic= 70A Ic= 35A Ic= 17.5A 0 機種7. 20 定h 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 600 15 1000 Coes 400 10 200 5 Cres 100 0 5 10 15 20 25 30 35 0 0 100 200 300 0 400 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Diode Module Outline Drawings, mm 6R1MBi75P-160 90 78.5 4- Ø 6.1 C3 2- Ø5.5 11.75 7 14 7 0.5 21 7 + 23.5 16 - G E C 11 K 11.75 Ø 2.5 14 14 28.5 11 32 3 1.5 6R1MBi100P-160 6R1MBi75P-160 Equivalent Circuit Schematic 2 his pr T d 3月chemmend 年ct is rseco 07 odu t 0 No 保led befor new u e 廃soletdesign. 守 ob JAPAN 予n marc 止o 13 17 20.4 6 K C G E 3.4 Ø 2.1 2 x t1 R1 0 機種7. 20 定h