7MBP100TEA060

7MBP100TEA060 Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 100A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 450 500 400 600 100 200 100 347 50 100 50 198 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W A A A W V V mA V mA °C °C °C °C V N·m DC 1ms Duty=72.3% *2 Collector power dissipation One transistor *3 Collector current DC 1ms Forward current diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Collector-Emitter voltage *1 Collector current Inverter Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.665/(100 x 2.6) x 100=72.3% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.36=347W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Breake] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 7 MBP100TEA060 Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Brake IGBT-IPM Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr PAV Condition VCE=600V Vin terminal open. Ic=100A Terminal Chip -Ic=100A Terminal Chip VCE=600V Vin terminal open. Terminal Ic=50A Chip Terminal -Ic=50A Chip VDC=300V,Tj=125°C IC=100A Fig.1, Fig.6 VDC=300V, IC=100A Fig.1, Fig.6 Internal wiring inductance=50nH Main circuit wiring inductace=54nH Min. 1.2 100 Typ. 1.8 1.6 1.75 1.9 Max. 1.0 2.3 2.6 1.0 2.2 3.3 3.6 0.3 Unit mA V V mA V V µs Inverter Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) mJ Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Current limit resistor RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH V UV VH Condition Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. 150 75 150 11.0 0.2 Typ. Max. 8 -12.5 Unit A A µs µs °C °C V V 5 20 0.5 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *9 Inverter Brake Case to fin thermal resistance with compound *9 For 1device, Case is under the device IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.36 0.665 0.63 Unit °C/W °C/W °C/W - °C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating Min. ±2.0 ±5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol V DC V CC Min. 13.5 2.5 Typ. 15.0 Max. 400 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 270 Max. Unit g 7 MBP100TEA060 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic I ALM Ic I ALM Ic I ALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U CT GND N Ic VinU GNDU AC200V Figure 6. Switching Characteristics Test Circuit V DC 15V SW2 20k + Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7 MBP100TEA060 Block diagram P VccU VinU 4 3 IGBT-IPM ALMU 2 RALM 1.5k GNDU 1 VccV VinV 8 7 Pre Driver Vz U ALMV 6 RALM 1.5k GNDV 5 VccW VinW ALMW 12 11 10 Pre Driver Vz V Pre Driver RALM 1.5k Vz W GNDW 9 Vcc VinX 14 16 Pre Driver Vz GND 13 VinY 17 Pre Driver Vz VinZ 18 Pre Driver Vz Pre-drivers include following functions 1.Amplifier for driver B 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection VinDB ALM 15 19 Pre Driver RALM 1.5k Vz N Outline drawings, mm M BCFM Mass : 270g 7MBP100TEA060 Characteristics Control circuit characteristics (Respresentative) IGBT-IPM P ower sup ply current vs. Switching frequency Tc=1 25°C 60 Pow er su p ply c urre nt : Icc (m A) V cc=17V V cc=15V Input signal thresh old voltage vs. P ower sup ply voltag e 2 .5 Inpu t sig nal thres hold voltag e : Vin (on),Vin (off) (V) Tj=25°C Tj= 12 5°C 50 40 30 20 10 0 0 P-sid e N-sid e 2 V cc=13V } Vin(off) 1 .5 } Vin(on) 1 V cc=17V V cc=15V V cc=13V 0 .5 0 5 10 15 20 25 12 Switch in g freq u en cy : fs w (kHz) 13 14 15 16 17 Power su p p ly voltag e : Vcc (V) 18 Under voltage vs. Junction temp erature 14 12 10 8 6 4 2 0 20 40 60 80 100 12 0 Ju nc tion te m pe ra tu re : Tj (°C) 140 Un de r volta ge h ys teris is : VH (V) 1 Un d er voltag e h ysterisis vs. Jn ction tem p erature Und er voltag e : VUVT (V) 0 .8 0 .6 0 .4 0 .2 0 20 40 60 80 100 12 0 140 Ju n ction tem peratu re : Tj(°C) Alarm hold tim e vs. P ower sup ply voltag e 3 O ver he atin g p rotection : TjO H (°C) O H h y ste risis : Tj H (°C) Alarm hold time : tALM (m Se c) 2 .5 Tc= 10 0° C 2 Tc=25°C 1 .5 1 0 .5 0 12 13 14 15 16 17 Power su p p ly voltag e : Vcc (V) 18 20 0 Over heatin g characteristics TjOH,TjH vs. Vcc TjO H 15 0 10 0 50 TjH 0 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V) 7MBP100TEA060 Main circuit characteristics (Respresentative) IGBT-IPM Col lector cu rren t vs. Coll ec to r-Emitter voltag e Tj=25°C(Ch ip) 12 0 10 0 80 60 40 20 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itte r vo ltage : Vce (V) V cc= 17V V cc=13V Vc c= 15V Collector Cu rre nt : Ic (A) Col lector cu rren t vs. Collec tor-Emitter voltag e Tj=125°C(Ch ip ) 12 0 10 0 80 60 40 20 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) V cc= 17V V cc=13V Vc c= 15V Col lector cu rren t vs. Collec tor-Emitter voltag e Tj=125°C (Term in al) 12 0 10 0 80 60 40 20 0 0 0 .5 1 1.5 2 2.5 3 Collector-Em itter vo lta g e : Vce (V) Vc c= 15V Collector Cu rre nt : Ic (A) Collec tor Cu rre nt : Ic (A) V cc=17V V c c= 13V Forward current vs. Forward voltage (Chip) 15 0 12 5° C 2 5°C 10 0 Fo rw ard Cu rren t : If (A) Fo rw ard Curren t : If (A) 15 0 Forward current vs. Forward voltage (Term inal) 12 5°C 10 0 2 5° C 50 50 0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V) 0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V) 7 MBP100TEA060 IGBT-IPM Switching Loss vs. Collector Current Edc=30 0V,Vcc=15 V,Tj=25°C 10 Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) 10 Switching Loss vs. Collector Current Edc=300V,V cc=15V,Tj=1 25°C 8 8 Eon 6 Eon 4 6 4 Eoff 2 E rr 0 2 Eoff E rr 0 0 20 40 60 80 10 0 120 0 20 40 60 80 10 0 120 Collector cu rren t : Ic (A) Collec tor cu rren t : Ic (A) Transient therm al resistance Th erm al resista n ce : Rth (j-c) (°C /W ) 1 FWD IG BT 0 .1 0.01 0.00 1 0.0 1 0 .1 1 Pu lse width :Pw (sec) Power d eratin g for IG BT (per device) 40 0 Collecter P owe r Dissip ation : Pc (W ) 35 0 30 0 25 0 20 0 15 0 10 0 50 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C) Co lle cter Power D issip ation : P c (W ) 25 0 Power derating for FW D (per device) 20 0 15 0 10 0 50 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C) 7MBP100TEA060 IGBT-IPM Switching tim e vs. Collector current Edc=30 0V,Vcc=15 V,Tj=25°C 10 00 0 S witch in g tim e : to n,toff,tf (nSec) 10 00 0 S witch in g tim e : ton ,toff,tf (n Sec) Switching tim e vs. Collector current Edc=300 V,V cc=15V,Tj=1 25°C ton 1 00 0 toff ton toff 1 00 0 10 0 tf 10 0 tf 10 20 40 60 80 100 120 140 160 Col lector cu rren t : Ic (A) 10 20 40 60 80 100 120 140 160 Col lector cu rren t : Ic (A) Reverse recovery characteristics trr,Irr vs.IF trr125°C R eve rse rec overy cu rren t:Irr(A) Reverse re covery time:trr(nsec) 10 0 trr2 5° C Irr125°C Irr2 5° C 10 1 20 40 60 80 100 120 140 160 Fo rw ard cu rren t:IF(A) 7MBP100TEA060 Characteristics Dynamic Brake Characteristics (Respresentative) IGBT-IPM Collector current vs. Collector-Em itter voltage Tj=25°C 80 V cc=15V Vc c= 17V Collector current vs. Collector-Em itter voltage Tj=1 25°C 80 Vc c= 15V Coll ec to r Cu rre nt : Ic (A) 60 V cc=13V Co llector Current : Ic (A) 60 V cc= 17V V cc=13V 40 40 20 20 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Transient therm al resistance Th erm al resista n ce : Rth (j-c) (°C /W ) 1 IG B T 0 .1 0.01 0.00 1 0.0 1 0 .1 1 Pu lse width :Pw (sec) Power derating for IG BT (per device) 25 0 Co lle cter Power D issip ation : P c (W ) 20 0 15 0 10 0 50 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C)