7MBP50RA-060

7MBP 50RA-060 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode One Transistor Collector Power Dissi. DB Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC *1 VIN *2 IIN VALM *3 IALM *4 Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 450 500 400 600 50 100 50 198 30 60 30 120 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 Units IGBT IPM 600V 6×50A+DB n Outline Drawing Min. 0 0 200 0 V A W A W V mA V mA Fig. 1 °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=50A -IC=50A VCE=600V, Input Terminal Open IC=30A -IC=30A Min. Typ. Max. 1.0 2.8 3.0 1.0 2.8 3.3 Units mA V V mA V V DB • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. Surface Of IGBT Chip Tj=125°C Tj=125°C Tj=25°C Min. 3 10 1.00 1.25 110 20 150 20 75 45 1.5 1425 11.0 0.2 10 2 1500 A µs ms Ω V Typ. Max. 18 65 1.70 1.95 125 °C Units mA V 1.35 1.60 8.0 1575 12.5 • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=300V IF=50A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Units µs 7MBP 50RA-060 • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. Typ. 0.05 IGBT IPM 600V 6×50A+DB Max. 0.63 1.33 1.04 Units °C/W n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection 7MBP 50RA-060 n Dynamic Brake Collector Current vs. Collector-Emitter Voltage 60 T j= 2 5 ° C V CC =17V,15V, 13V 60 T j= 1 2 5 ° C IGBT IPM 600V 6×50A+DB Collector Current vs. Collector-Emitter Voltage [A] C [A] 50 C 50 V CC =17V,15V, 13V Collector Current : I Collector Current : I 40 40 30 30 20 20 10 10 0 0 1 2 3 Collector-Emitter Voltage : V CE [ V] 4 0 0 1 2 3 4 Collector-Emitter Voltage : V CE [ V] Transient Thermal Resistance 0 Reverse Biased Safe Operating Area 300 V C C =15V, T j< 1 2 5 ° C [°C/W] 10 th(j-c) C [A] Collector Current : I 10 0 IGBT 250 200 Thermal Resistance : R 10 -1 150 100 50 10 -2 10 -3 10 -2 10 -1 0 0 100 200 300 400 500 600 700 Collector-Emitter Voltage : V CE [ V] Pulse Width : P W [ sec] Power Derating For IGBT Over Current Protection vs. Junction Temperature 140 (per device) 120 V cc= 1 5 V [W] 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 C oc [A] 100 Collector Power Dissipation : P Over Current Protection Level : I 80 60 40 20 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [ °C] Case Temperature : T C [ °C] 7MBP 50RA-060 n Control Circuit Power Supply Current vs. Switching Frequency T j= 1 0 0 ° C V CC= 1 7 V 25 N-Side 20 2,5 IGBT IPM 600V 6×50A+DB Input Signal Threshold Voltage vs. Power Supply Voltage T j= 2 5 ° C T j= 1 2 5 ° C 2,0 [mA] V CC= 1 5 V V CC= 1 3 V Input Signal Threshold Voltage CC Power Supply Current : I : V in(on) , V in(off) [V] V in(off) 1,5 V in(on) 1,0 15 10 P-Side 5 V C C= 1 7 V V C C= 1 5 V V C C= 1 3 V 0 5 10 15 20 25 0,5 0,0 12 13 14 15 16 17 18 19 Switching Frequency : fsw [kHz] Power Supply Voltage : V cc [ V] Under Voltage vs. Junction Temperature 14 12 1,0 Under Voltage Hysterisis vs. Junction Temperature [V] 0,8 [V] Under Voltage Hysterisis : V 40 60 80 100 120 140 10 8 6 4 2 0 20 UV H Under Voltage : V 0,6 0,4 0,2 0,0 20 40 60 80 100 120 140 Junction Temperature : T j [ °C] Junction Temperature: T j [ °C] Alarm Hold Time vs. Power Supply Voltage 3,0 200 Over Heating Characteristics T cOH , T jOH , T cH, T jH v s. V cc , T jOH [°C] [ms] 2,5 T j= 1 0 0 ° C 2,0 T j= 2 5 ° C 1,5 , T jH [°C] cH T jOH 150 ALM Over Heating Protection : T cOH Over Heating Hysterisis : T Alarm Hold Timen : t T cOH 100 1,0 50 0,5 T cH ,T jH 0 12 13 14 15 16 17 18 0,0 12 13 14 15 16 17 18 Power Supply Voltage : V cc [ V] Power Supply Voltage : V cc [ V] 7MBP 50RA-060 n Inverter Collector Current vs. Collector-Emitter Voltage 100 T j= 2 5 ° C 100 T j= 1 2 5 ° C IGBT IPM 600V 6×50A+DB Collector Current vs. Collector-Emitter Voltage [A] C Collector Current : I Collector Current : I C [A] 80 V C C =17V,15V, 13V 80 V C C =17V,15V, 13V 60 60 40 40 20 20 0 0 1 2 3 4 Collector-Emitter Voltage : V CE [ V] 0 0 1 2 3 4 Collector-Emitter Voltage : V CE [ V] Switching Time vs. Collector Current V D C= 3 0 0 V , V C C=15V, T j= 2 5 ° C Switching Time vs. Collector Current V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [ns] ton toff , t r, t off , t f [ns] t off t on 1000 1000 on Switching Time : t Switching Time : t on tf tf 100 100 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 Collector Current : I C [ A] Collector Current : I C [ A] Reverse Recovery Characteristics Forward Voltage vs. Forward Current 100 t rr, I rr v s. I F t rr = 1 2 5 ° C [A] rr [A] 80 70 60 50 40 30 20 10 0 0 1 T j= 1 2 5 ° C 25°C [ns] rr 90 100 t rr = 2 5 ° C Reverse Recovery Current : I F Reverse Recovery Time : t Forward Current : I I rr = 1 2 5 ° C I rr = 1 2 5 ° C 10 2 Forward Voltage : V F [ V] 3 4 0 10 20 30 40 50 60 70 80 Forward Current : I F [ A] 7MBP 50RA-060 Transient Thermal Resistance 500 IGBT IPM 600V 6×50A+DB Reverse Biased Safe Operating Area V C C=15V, T j< 1 2 5 ° C Thermal Resistance : Rth(j-c) [°C/W] 10 1 400 10 0 Collector Current : I FWD C [A] 300 200 IGBT 10 -1 100 10 -2 0 -3 10 10 -2 10 -1 10 0 0 100 200 300 400 500 600 700 Pulse Width : P W [ sec] Collector-Emitter Voltage : V CE [ V] Power Derating For IGBT 200 (per device) 100 Power Derating For FWD (per device) [W] [W] 150 C Collector Power Dissipation : P Collector Power Dissipation : P C 80 60 100 40 50 20 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Case Temperature : T C ( °C) Case Temperature : T C ( °C) Switching Loss vs. Collector Current 5 V DC =300V, V CC =15V, T j= 2 5 ° C 7 Switching Loss vs. Collector Current V D C =300V, V C C =15V, T j = 1 2 5 ° C E on , E off , E rr [mJ/cycle] , E off , E rr [mJ/cycle] 4 E on 6 5 4 3 E off 2 E off 3 2 1 0 0 10 20 30 40 50 60 70 80 E rr on Switching Loss : E 1 E rr 0 0 10 20 30 40 50 60 70 80 Collector Current : I C [ A] Switching Loss : E on 7MBP 50RA-060 Over Current Protection vs. Junction Temperature 120 V cc = 1 5 V IGBT IPM 600V 6×50A+DB oc [A] Over Current Protection Level : I 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [ °C] 7MBP 50RA-060 n Outline Drawing IGBT IPM 600V 6×50A+DB Weight: 440g Specification is subject to change without notice March 98 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com