7MBP50RJ120

7MBP50RJ120 IGBT IPM R-series 1200V class Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs. · Low power loss and soft switching. · High performance and high reliability IGBT with overheating protection. · Both P-side and N-side alarm output available. · Higher reliability because of a big decrease in number of parts in built-in control circuit. 1200V / 50A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VALM IALM Tj Topr Tstg Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 50 100 50 357 25 50 25 198 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2500 3.5 3.5 Unit V V V V A A A W A A A W V V mA V mA °C °C °C V N·m N·m Collector-Emitter voltage *1 Collector current Inverter DC 1ms Duty=98.0% *2 Collector power dissipation One transistor *3 Collector current DC 1ms Forward Current of Diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) Brake Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB. *2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.85(50x3.0)x100=98.0% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.35=357W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. 7 MBP50RJ120 Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=50A Terminal Chip -Ic=50A Terminal Chip VCE=1200V Vin terminal open. Ic=25A Terminal -Ic=25A Terminal VDC=600V,Tj=125°C IC=50A Fig.1, Fig.6 VDC=600V, IF=50A Fig.1, Fig.6 Min. 1.2 Typ. - IGBT-IPM Max. 1.0 2.6 3.0 1.0 2.6 3.3 3.6 0.3 Unit mA V V mA V µs Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Brake Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Inverter Control circuit Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Min. Typ. Max. Unit mA mA V V V ms ms ms ohm Unit A A µs µs °C °C °C °C V V 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Min. 75 38 150 VDC=0V, IC=0A CaseTemperature 110 11.0 0.2 Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Typ. 10 Max. 12 125 12.5 Unit °C/W °C/W °C/W Limiting Resistor for Alarm RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH TcOH TcH V UV VH Condition Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips 20 20 0.5 Max. 0.35 0.85 0.63 - Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *8 Inverter Brake Case to fin thermal resistance with compound *8 : (For 1 device, Case is under the device) IGBT FWD IGBT Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating Min. ±2.0 ±5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol V DC V CC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 450 Max. Unit g 7 MBP50RJ120 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic I ALM Ic I ALM Ic I ALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U CT GND N Ic VinU GNDU AC200V V DC 15V SW2 20k + Figure 6. Switching Characteristics Test Circuit Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7 MBP50RJ120 Block diagram P VccU VinU 4 3 IGBT-IPM ALMU 2 R ALM 1.5k GNDU 1 VccV VinV 8 7 Pre- Driver Vz U ALMV 6 R ALM 1.5k GNDV 5 VccW VinW ALMW 12 Pre - Driver Vz V 11 10 Pre - Driver R ALM 1.5k Vz W GNDW 9 Vcc VinX 14 16 Pre - Driver Vz GND 13 VinY 17 Pre - Driver Vz VinZ Pre-drivers include following functions 18 Pre - Driver Vz 1.Amplifier for driver 2.Short circuit protection B VinDB ALM 15 19 Pre - Driver Vz N 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection R 1.5k ALM Over heating protection circuit Outline drawings, mm 109 95 13.8 _ +0.3 _ +1 _ +0 . 3 66.44 10 _ 6 + 0 . 15 _ +0 . 2 _ 3.22 + 0 . 3 10 _ 6 + 0 . 15 _ +0 . 2 10 _ +0 . 2 12 _ +0 . 25 4- O5 / _ 6 + 0 . 15 _ 2 +0 . 1 2 _ +0.3 1 B _ +0.3 88 _ +1 74 20 10 P 20 N 17 W V U 0.5 0.5 24 26 19- 0.5 26 2- O 2.5 / 6 - M5 7 9 22 +1 . 0 -0.3 22 17 12.5 +1 . 0 -0.3 +1 . 0 -0.2 17 31 - 0 . 3 +0 . 6 Mass : 450g 8 7MBP50RJ120 Characteristics Control circuit characteristics (Respresentative) IGBT-IPM Power supply curr ent vs. Switching frequency Tj=100 °C 40 P-side 35 V cc = 17V V cc = 15V V cc = 13V 2.5 Input signal threshold voltage vs. P ower s upply voltage T j= 25 °C Tj= 125° C Powe r supply current : Icc (mA) Input s ignal thres hold voltage N-side 2 : Vin(on), Vin(off) (V) 30 25 20 15 } Vin(off) 1.5 } Vin(on) 1 V cc = 17V 10 5 0 0 5 10 15 20 25 V cc = 15V V cc = 13V 0.5 0 12 13 14 15 16 17 18 Sw itc hing frequenc y : fs w (kHz) Po we r s up ply volta ge : Vc c ( V) U nder voltage vs. Junction temperature 14 1 U nde r voltage hysterisis vs. Jnction tempe ra tur e 12 Un der vo ltage hysterisis : VH (V) 0.8 Under voltag e : VUVT (V) 10 8 0.6 6 0.4 4 0.2 2 0 20 40 60 80 1 00 120 1 40 0 20 40 60 80 1 00 120 1 40 Junction tem perat ure : Tj (°C) Junc tion tem pe rat ure : Tj (°C) Alar m ho ld time vs . P owe r s upply voltage 3 2 00 O ve r heating char acte ris tic s Tc OH ,TjOH ,T cH ,TjH vs. Vc c O ver heating pro tection : TcO H,TjO H (°C) O H hysterisis : TcH,TjH (°C) Alarm hold time : tAL M (mSe c) 2.5 Tj=1 25 °C 2 T j= 25° C 1.5 TjO H 1 50 T cO H 1 00 1 50 T cH,TjH 0.5 0 12 13 14 15 16 17 18 0 12 13 14 15 16 17 18 Po we r sup ply volt age : Vc c ( V) Po we r s up ply vo lta ge : Vc c ( V) 7 MBP50RJ120 Main circuit characteristics (Respresentative) IGBT-IPM Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=25 °C (C hip) 80 70 V cc = 17V V cc= 15 V Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=2 5° C (Te rm inal) 80 70 Vcc= 17 V V cc = 13V Vcc= 15V Co lle cto r Cur re nt : Ic ( A) V cc= 13 V Co lle cto r Cur rent : Ic (A) 60 50 40 30 20 60 50 40 30 20 10 10 0 0 0 0 .5 1 1.5 2 2.5 3 C ollector -Emit ter vo lta ge : V ce ( V) 0 C ollector -Emit ter vo lta ge : Vce (V) 0 .5 1 1 .5 2 2.5 3 Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5° C (C hip) 80 70 V cc= 17 V Vcc= 15 V Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5 °C (Term inal) 80 70 Vcc= 17 V V cc = 13V 60 50 40 30 20 10 0 V cc= 15 V Co lle cto r Curre nt : Ic ( A) 60 50 40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Colle ct or Curre nt : I c ( A) Vcc= 13V 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C ollector -Emit ter vo lta ge : Vce (V) Fo rward curre nt vs. Fo rwar d voltage (C hip) 80 70 60 50 40 30 20 10 0 0 0.5 1 1 .5 2 2 .5 80 70 60 50 40 30 20 10 0 0 Fo rward curre nt vs. Fo rwar d voltage (T ermina l) 1 25 °C 25°C 125 °C 25° C F or wa rd Current : I f (A) Forw ard Current : If (A) 0 .5 1 1.5 2 2.5 3 F or wa rd vo lta ge : V f ( V) F or wa rd vo ltag e : V f ( V) 7 MBP50RJ120 IGBT-IPM Switc hing Loss vs. C ollector C urrent Edc=6 00 V,Vc c=15V ,Tj=2 5 °C 25 25 Switc hing Los s vs. C ollec tor C ur re nt Edc=600V,Vcc=15V,Tj=125 °C Sw itching loss : Eon,E off,Err (mJ/cycle) S wit ching lo ss : E on,E off,Er r (mJ/c yc le) E on 20 20 15 Eon 10 Eo ff 5 Err 0 0 10 20 30 40 50 60 70 80 15 10 Eoff 5 E rr 0 0 10 20 30 40 50 60 70 80 Colle ctor current : Ic (A) Colle ctor cur rent : Ic (A) Reversed bias ed safe operating area Vcc=15V,Tj 125 ° C 70 0 Trans ient thermal resistance 1 FW D 60 0 Thermal re sistance : Rt h(j-c) (° C/ W ) I GB T C ollector cu rren t : Ic (A) 50 0 40 0 SCS O A (non-repetitive pu ls e) 0 .1 30 0 20 0 10 0 RBS O A (R e petit ive pu lse) 0 0 20 0 40 0 600 800 1 000 1 20 0 140 0 0. 01 0 .001 0.01 0 .1 1 C ollector-E m itter volta ge : V ce (V) P ulse width :P w (se c) Power dera ting fo r IGB T (per device) 400 1 50 Power de ra ting for F W D (pe r devic e) Collecter Pow er Dissipation : Pc (W ) 350 300 250 200 150 100 50 0 0 20 40 60 80 1 00 120 1 40 160 Collec ter Pow er Dissipation : Pc (W ) 1 25 1 00 75 50 25 0 0 20 40 60 80 1 00 120 1 40 1 60 Case Tem pe ratur e : Tc (°C) Case Temper ature : Tc (°C) 7 MBP50RJ120 IGBT-IPM S witching time vs. C ollec to r c ur rent Edc=6 00V,Vcc=15V ,Tj=25 °C 1 00 00 1 00 00 S witching time vs . C ollec to r c ur re nt E dc =600V ,V cc =1 5V,Tj=12 5 ° C t off Switching time : ton,toff,tf (nSec) t off ton Sw itching tim e : to n, tof f,tf (nSe c) ton 10 00 10 00 tf tf 1 00 1 00 10 0 10 20 30 40 50 60 C ollect or curre nt : Ic (A) 70 80 10 0 10 20 30 40 50 60 70 80 C ollect or curre nt : Ic (A) Reverse re co ve ry char acte ris tic s trr,Irr vs. IF 10 00 Reverse recover y c urr ent : Irr (A) Rever se re co very t im e : trr (nSec) t rr1 25 °C t rr25° C 1 00 I rr1 25 °C Irr 25 °C 10 0 10 20 30 40 50 60 70 80 For ward current : IF(A) 7 MBP50RJ120 Dynamic Brake Characteristics (Representative) IGBT-IPM C ollector current vs. Collector-E mitte r voltage Tj=2 5°C ( Terminal) 40 Vcc= 17 V 35 35 V cc = 13V 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 Vcc= 15 V 40 C o lle ctor current vs. Colle ctor-Emitter voltage Tj=12 5°C( T ermina l) Vcc= 15 V Vcc= 17 V Co llecto r Cur rent : Ic (A) Colle ct or Curre nt : I c ( A) 30 Vcc= 13V 25 20 15 10 5 0 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er voltage : V ce (V) C olle ct or- Emitt er vo lta ge : V ce ( V) Tran sien t the rm a l res is ta nc e 1 IG B T 35 0 Revers ed bias ed safe operating area V cc=1 5V,Tj 125 °C T hermal resistance : R th(j-c) (°C/W ) 30 0 C ollector cu rren t : Ic (A) 25 0 20 0 S C S OA (no n-re peti tive pu ls e) 0 .1 15 0 10 0 50 RBSOA (R e peti tive pu ls e) 0.01 0 .00 1 0.01 0 .1 1 0 0 20 0 40 0 600 800 1 000 1 20 0 140 0 P ulse wid th :P w (se c) C ollector-E m itte r volta ge : V ce (V) Power dera ting fo r IGB T (per device) 2 50 Co llecte r P ow er Diss ipa tio n : Pc ( W) 2 00 1 50 1 00 50 0 0 20 40 60 80 1 00 1 20 140 1 60 Case Temper ature : Tc (°C)