7MBP50TEA060_05

7MBP50TEA060 Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 50A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 450 500 400 600 50 100 50 144 30 60 30 144 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W A A A W V V mA V mA °C °C °C °C V N·m DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Collector current DC 1ms Forward current diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Collector-Emitter voltage *1 Collector current Inverter Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/1.263/(50 x 2.6) x 100=76.1% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.87=144W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/0.87=144W [Breake] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 7 MBP50TEA060 Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Brake IGBT-IPM Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr PAV Condition VCE=600V Vin terminal open. Ic=50A Terminal Chip -Ic=50A Terminal Chip VCE=600V Vin terminal open. Terminal Ic=30A Chip Terminal -Ic=30A Chip VDC=300V,Tj=125°C IC=50A Fig.1, Fig.6 VDC=300V, IC=50A Fig.1, Fig.6 Internal wiring inductance=50nH Main circuit wiring inductace=54nH Min. 1.2 30 Typ. 2.0 1.6 1.75 1.9 Max. 1.0 2.5 2.6 1.0 2.2 3.3 3.6 0.3 Unit mA V V mA V V µs Inverter Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) mJ Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Current limit resistor RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH V UV VH Condition Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. 75 45 150 11.0 0.2 5 20 0.5 Typ. Max. 8 -12.5 Unit A A µs µs °C °C V V Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *9 Inverter Brake Case to fin thermal resistance with compound *9 For 1device, Case is under the device IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.87 1.263 0.87 Unit °C/W °C/W °C/W - °C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating Min. ±2.0 ±5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol V DC V CC Min. 13.5 2.5 Typ. 15.0 Max. 400 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 270 Max. Unit g 7 MBP50TEA060 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic I ALM Ic I ALM Ic I ALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U CT GND N Ic VinU GNDU Figure 6. Switching Characteristics Test Circuit AC200V V DC 15V SW2 20k + Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7 MBP50TEA060 Block diagram P VccU VinU 4 3 IGBT-IPM ALMU 2 RALM 1.5k GNDU 1 VccV VinV 8 7 Pre Driver Vz U ALMV 6 RALM 1.5k GNDV 5 VccW VinW ALMW 12 11 10 Pre Driver Vz V Pre Driver RALM 1.5k Vz W GNDW 9 Vcc VinX 14 16 Pre Driver Vz GND 13 VinY 17 Pre Driver Vz VinZ 18 Pre Driver Vz Pre-drivers include following functions 1.Amplifier for driver B 2.Short circuit protection 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection VinDB ALM 15 19 Pre Driver RALM 1.5k Vz N Outline drawings, mm Package Type : P622 M BCFM Mass : 270g 7MBP50TEA060 Characteristics Control circuit characteristics (Respresentative) IGBT-IPM P ower sup ply current vs. Switching frequency Tc=1 25°C 60 Pow er su p ply c urre nt : Icc (m A) 50 40 V cc=17V Input signal threshold voltage vs. P ower sup ply voltag e 2 .5 Inp u t sig na l thres hold voltag e : Vin (on),Vin (o ff) (V) Tj=25°C Tj= 12 5°C P-sid e N-sid e 2 } Vin(off) 1 .5 } Vin(on) 30 20 10 0 0 5 10 15 V cc=15V V cc=13V 1 V cc= 17V V cc= 15V V cc= 13V 0 .5 0 20 25 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V) Switch ing frequency : fs w (k Hz) Under voltage vs. Junction temp erature 14 12 Und er voltag e : VUVT (V) 10 8 6 4 2 0 20 40 60 80 100 12 0 140 Ju nc tion te m pe ra tu re : Tj (°C) Under vol tage h ys teris is : VH (V) Un d er voltag e h ysterisis vs. Jn ction tem p erature 1 0 .8 0 .6 0 .4 0 .2 0 20 40 60 80 100 12 0 140 Ju nc tion te m pe ra tu re : Tj (°C) Alarm hold tim e vs. P ower sup ply voltag e 3 O ver he atin g p rote ction : TjO H (°C) OH hy ste risis : Tj H (°C) Ala rm h ol d tim e : tALM (m Se c) 2 .5 Tc= 10 0° C 2 Tc =25°C 1 .5 1 0 .5 0 12 13 14 15 16 17 18 Power s up p ly voltage : Vcc (V) 20 0 Over heatin g characteristics TjOH,TjH vs. Vcc TjO H 15 0 10 0 50 TjH 0 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V) 7 MBP50TEA060 Main circuit characteristics (Respresentative) IGBT-IPM Collector curren t vs. Collector-Em itter voltag e Tj=25 ° C(Chip) 60 V cc=15V Collector current vs. Collector-Em itter voltage Tj=25°C(Term inal) 60 V cc= 15V Coll ec to r Cu rre nt : Ic (A) Coll ec to r Cu rre nt : Ic (A) 50 Vc c= 17V V cc=13V 50 V cc=17V V cc=13V 40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) 40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Collector curren t vs. Collector-Em itter voltag e Tj=125°C(Chip) 60 50 40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) V cc=15V Collector curren t vs. Collector-Em itter voltag e Tj=125°C(Term inal) 60 50 V cc=17V V cc=15V Collector Cu rre nt : Ic (A) V cc=17V V cc=13V Collector Cu rre nt : Ic (A) 40 V cc= 13V 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Forward current vs. Forward voltage (Chip) 10 0 10 0 Forward current vs. Forward voltage (Term inal) Fo rw ard Cu rren t : If (A) Fo rw ard Current : If (A) 80 12 5° C 60 2 5°C 80 12 5° C 2 5°C 60 40 40 20 20 0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V) 0 0 0.5 1 1.5 2 2 .5 Fo rw ard vol ta ge : Vf (V) 7 MBP50TEA060 IGBT-IPM 6 5 4 3 Eon 2 1 0 0 10 20 30 40 50 60 Switch in g l os s : Eon,Eo ff,Err (m J/cy cle) Switching Loss vs.Collector Current Edc=30 0V,Vcc=15 V,Tj=25°C Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) Switching Loss vs.Collector Current Edc=300V,V cc=15V,Tj=1 25°C 6 Eon 5 4 3 2 Eoff 1 E rr 0 0 10 20 30 40 50 60 Eoff E rr Collec tor cu rren t : Ic (A) Collec tor cu rren t : Ic (A) Transient therm al resistance Th erm al res is ta nc e : R th (j-c) (°C /W ) FW D 1 IG B T 0 .1 0.01 0.00 1 0.0 1 0 .1 1 Pu lse width :Pw (sec) Power derating for IG BT (per device) 15 0 Co lle cter Power D issip ation : P c (W ) Co llecter P owe r D is sipatio n : P c (W ) 15 0 Power derating for FW D (per device) 10 0 10 0 50 50 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C) 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C) 7 MBP50TEA060 IGBT-IPM 10 000 Switch in g tim e : ton ,to ff,tf (n Se c) Switching tim e vs. Collector current E dc=300V,Vcc=15V,Tj=25°C 10 00 0 Switc h ing tim e : ton ,to ff,tf (n Se c) Switching tim e vs. Collector current Ed c=3 00V,Vcc=1 5V,Tj=12 5° C to n 1 000 to ff to n to ff 1 00 0 100 tf 10 0 tf 10 20 30 40 50 60 70 80 Col lector cu rren t : Ic (A) 10 20 30 40 50 60 70 80 Col lector cu rren t : Ic (A) Reverse recovery characteristics trr,Irr vs.IF trr125°C R eve rse rec overy cu rre n t:Irr(A) Reverse recovery time:trr(n se c) trr2 5° C 10 0 Irr12 5°C 10 Irr2 5° C 1 20 30 40 50 60 70 80 Fo rw ard cu rren t:IF(A) 7 MBP50TEA060 Characteristics Dynamic Brake Characteristics (Respresentative) IGBT-IPM Collector current vs. Collector-Em itter voltage Tj=25°C 60 V c c= 15V Collector curren t vs. Collector-Em itter voltage Tj=1 25°C 60 50 V cc= 17V V cc=15V Coll ec to r Cu rre nt : Ic (A) Vc c= 17V V c c= 13V 40 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Coll ec to r Cu rre nt : Ic (A) 50 40 Vc c= 13V 30 20 10 0 0 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Transient therm al resistance Th erm al res istan ce : R th (j-c) (°C /W ) 1 IGB T 0 .1 0.01 0.00 1 0.0 1 0 .1 1 Pu lse width :Pw (sec) Power derating for IG BT (per device) 15 0 Co llecter P owe r D is sipatio n : P c (W ) 10 0 50 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C)