7MBP75RJ120

7MBP75RJ120 IGBT IPM R-series 1200V class Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs. · Low power loss and soft switching. · High performance and high reliability IGBT with overheating protection. · Both P-side and N-side alarm output available. · Higher reliability because of a big decrease in number of parts in built-in control circuit. 1200V / 75A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VALM IALM Tj Topr Tstg Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 75 150 75 500 25 50 25 198 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2500 3.5 3.5 Unit V V V V A A A W A A A W V V mA V mA °C °C °C V N·m N·m Collector-Emitter voltage *1 Collector current Inverter DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Collector current DC 1ms Forward Current of Diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB. *2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.73(75x3.0)x100=76.1% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. Brake 7 MBP75RJ120 Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VCE=1200V Vin terminal open. Ic=25A Terminal -Ic=25A Terminal VDC=600V,Tj=125°C IC=75A Fig.1, Fig.6 VDC=600V, IF=75A Fig.1, Fig.6 Min. 1.2 Typ. - IGBT-IPM Max. 1.0 2.6 3.0 1.0 2.6 3.3 3.6 0.3 Unit mA V V mA V µs Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Brake Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Inverter Control circuit Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Min. Typ. Max. Unit mA mA V V V ms ms ms ohm Unit A A µs µs °C °C °C °C V V 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Min. 113 38 150 VDC=0V, IC=0A CaseTemperature 110 11.0 0.2 Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Typ. Max. 12 125 12.5 Unit °C/W °C/W °C/W Limiting Resistor for Alarm RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH TcOH TcH V UV VH Condition Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips 10 - 20 20 0.5 Max. 0.25 0.73 0.63 - Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *8 Inverter Brake Case to fin thermal resistance with compound *8 : (For 1 device, Case is under the device) IGBT FWD IGBT Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating Min. ±2.0 ±5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol V DC V CC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 450 Max. Unit g 7 MBP75RJ120 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic I ALM Ic I ALM Ic I ALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U CT GND N Ic VinU GNDU AC200V V DC 15V SW2 20k + Figure 6. Switching Characteristics Test Circuit Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7 MBP75RJ120 Block diagram P VccU VinU 4 3 IGBT-IPM ALMU 2 R ALM 1.5k GNDU 1 VccV VinV 8 7 Pre- Driver Vz U ALMV 6 R ALM 1.5k GNDV 5 VccW VinW ALMW 12 Pre - Driver Vz V 11 10 Pre - Driver R ALM 1.5k Vz W GNDW 9 Vcc VinX 14 16 Pre - Driver Vz GND 13 VinY 17 Pre - Driver Vz VinZ Pre-drivers include following functions 18 Pre - Driver Vz 1.Amplifier for driver 2.Short circuit protection B VinDB ALM 15 19 Pre - Driver Vz N 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection R 1.5k ALM Over heating protection circuit Outline drawings, mm 109 95 13.8 _ +0.3 _ +1 _ +0 . 3 66.44 10 _ 6 + 0 . 15 _ +0 . 2 _ 3.22 + 0 . 3 10 _ 6 + 0 . 15 _ +0 . 2 10 _ +0 . 2 12 _ +0 . 25 4- O5 / _ 6 + 0 . 15 _ 2 +0 . 1 2 _ +0.3 1 B _ +0.3 88 _ +1 74 20 10 P 20 N 17 W V U 0.5 0.5 24 26 19- 0.5 26 2- O 2.5 / 6 - M5 7 9 22 +1 . 0 -0.3 22 17 12.5 +1 . 0 -0.3 +1 . 0 -0.2 17 31 - 0 . 3 +0 . 6 Mass : 450g 8 7MBP75RJ120 Characteristics Control circuit characteristics (Respresentative) Power supply curr ent vs. Switching fr eque ncy Tj=100 °C 50 P- side N-side V cc = 17V 2.5 IGBT-IPM Input signal threshold voltage vs. P ower supply voltage T j= 25 °C Tj= 125°C Pow er supp ly cur rent : Icc ( mA) 40 Inp ut signa l t hre shold vo lta ge V cc = 15V V cc = 13V 2 : V in(on),V in(of f) ( V) } Vin(off) 1.5 } Vin(on) 30 20 V cc = 17V V cc = 15V 10 V cc = 13V 1 0.5 0 0 5 10 15 20 25 0 12 13 14 15 16 17 18 Sw itc hing f reque nc y : fs w (kHz) Po we r s up ply volta ge : Vc c ( V) U nder voltage vs. J unction tempe ra tur e 14 1 12 U nde r voltage hysterisis vs. Jnction tempe ra tur e Unde r volt ag e : VUVT ( V) 10 8 Un der vo ltage hysterisis : VH (V) 0 .8 0 .6 6 0 .4 4 2 0 .2 0 20 40 60 80 1 00 120 1 40 0 20 Junc tio n tem pe rat ure : Tj (°C) Junction temperature : Tj (°C) 40 60 80 1 00 120 1 40 Alarm hold time vs. P ower supply voltage 3 2 00 Over heating c haracteris tic s TcOH ,TjOH ,TcH ,TjH vs. Vcc Over he ating pr ote ction : T cO H,TjOH (° C) Ala rm hold time : t AL M (mSe c) 2 .5 Tj= 125° C 2 Tj= 25°C 1 .5 TjO H O H hys terisis : Tc H, TjH (° C) 1 50 T cO H 1 00 1 50 T cH,TjH 0 .5 0 12 13 14 15 16 17 18 0 12 13 14 15 16 17 18 Po we r s up ply vo lta ge : Vc c ( V) Po w er supply volt age : Vc c (V) 7 MBP75RJ120 Main circuit characteristics (Respresentative) IGBT-IPM C ollector curr ent vs. Collector-E mitte r voltage Tj=2 5° C( C hip) 1 20 Vcc= 17 V 1 00 V cc = 15V V cc = 13V 1 20 C ollector curr ent vs. Collector-E mitte r voltage T j=2 5° C( Terminal) V cc = 15V V cc = 17V 1 00 Co lle cto r Cur rent : Ic (A) 80 Co lle cto r Cur re nt : Ic ( A) V cc= 13 V 80 60 60 40 40 20 20 0 0 0 .5 1 1.5 2 2.5 3 0 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C olle ct or- Emitt er vo ltage : V ce ( V) Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5° C( C hip) 1 20 Vcc= 15V V cc = 17V 1 00 Vcc= 13 V 1 20 Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5° C ( Terminal) Vcc= 15 V Vcc= 17 V 1 00 Co lle cto r Curre nt : Ic ( A) Co lle cto r Cur re nt : Ic ( A) V cc = 13V 80 80 60 60 40 40 20 20 0 0 0 .5 1 1.5 2 2.5 3 0 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C ollect or -Emit ter vo lta ge : V ce ( V) Fo rwar d curre nt vs . Fo rwar d voltage (C hip) 1 20 1 25 °C 1 00 25°C 1 00 1 20 Fo rwar d curre nt vs . Fo rwar d voltage ( Terminal) 1 25 °C 25° C Forw ard Current : If (A) F or wa rd Current : I f (A) 0 0 .5 1 1.5 2 2.5 3 80 80 60 60 40 40 20 20 0 0 0 0 .5 1 1.5 2 2.5 3 F orw a rd vo ltag e : V f ( V) F orw a rd vo ltag e : V f ( V) 7 MBP75RJ120 IGBT-IPM Switc hing Los s vs. C ollec tor C ur re nt Edc=6 00 V,Vcc=15V ,Tj=25 °C 35 35 Switc hing L os s vs. C ollec to r C ur re nt E dc =600V ,Vcc =1 5V,Tj=12 5 ° C S wit ching lo ss : E on,E off,Er r (mJ/c yc le) Sw it ching loss : E on,Eoff, Er r ( mJ /c ycle) 30 30 Eon 25 25 20 E on 15 20 15 Eo ff 10 Eoff 10 E rr 5 E rr 0 0 20 40 60 80 100 1 20 5 0 0 20 40 60 80 100 1 20 Collector curre nt : I c (A) Colle ctor cur rent : Ic (A) Reversed bias ed safe operating area Vc c=15V,Tj 125 ° C 105 0 Transient thermal resistance 1 FW D T hermal res istance : Rth(j-c) (°C/W ) 90 0 C ollector cu rrent : Ic (A) 75 0 IG BT 60 0 S CS O A (non-repetitive pulse) 0.1 45 0 30 0 15 0 R BS O A (R e petitive pulse) 0 0 20 0 40 0 600 80 0 1 00 0 1 20 0 140 0 0. 01 0 .001 0.01 0 .1 1 C ollector-E m itte r volta ge : V ce (V) P ulse width :P w (sec) Power der ating fo r IGBT (per device) 6 00 2 00 Power derating for FW D (per device) Co llec te r P ow er Diss ipa tio n : Pc (W ) 5 00 Collec ter P ow er Dissipa tio n : Pc (W ) 1 75 1 50 1 25 1 00 75 50 25 4 00 3 00 2 00 1 00 0 0 20 40 60 80 1 00 1 20 140 1 60 0 0 20 40 60 80 1 00 1 20 140 1 60 Ca se Temper ature : Tc (°C) Ca se Temper ature : Tc (°C) 7 MBP75RJ120 IGBT-IPM S witching time vs . C ollec to r c ur re nt Edc=600V,Vcc=15V,Tj=25 °C 1 00 00 1 00 00 S witching time vs . C ollec to r c ur re nt E dc =600V ,V cc =1 5V,Tj=12 5 ° C Sw itching time : ton,toff,tf (nSec) Sw itching tim e : to n, tof f,tf (nSe c) to ff ton t off 10 00 t on 10 00 tf 1 00 tf 10 1 00 0 20 40 60 80 100 1 20 0 20 40 60 80 100 1 20 C ollec tor curre nt : I c ( A) C ollec tor curre nt : I c ( A) Reverse reco ve ry char acte ris tic s trr,Irr vs. IF 10 00 Reve rs e r ecovery curre nt : I rr(A) Re ve rse r ecove ry tim e : t rr(nSe c) trr125°C trr 25 °C 1 00 Irr125° C Irr25 °C 10 0 20 40 60 80 100 1 20 For ward current : I F( A) 7 MBP75RJ120 Dynamic Brake Characteristics (Representative) IGBT-IPM C ollector current vs. Collector-E mitte r voltage Tj=2 5°C ( Terminal) 40 Vcc= 17 V 35 35 V cc = 13V 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 Vcc= 15 V 40 C o lle ctor current vs. Colle ctor-Emitter voltage Tj=12 5°C( T ermina l) Vcc= 15 V Vcc= 17 V Co llecto r Cur rent : Ic (A) Colle ct or Curre nt : I c ( A) 30 Vcc= 13V 25 20 15 10 5 0 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er voltage : V ce (V) C olle ct or- Emitt er vo lta ge : V ce ( V) Tran sien t the rm a l res is ta nc e 1 IG B T 35 0 Revers ed bias ed safe operating area V cc=1 5V,Tj 125 °C T hermal resistance : R th(j-c) (°C/W ) 30 0 C ollector cu rren t : Ic (A) 25 0 20 0 S C S OA (no n-re peti tive pu ls e) 0 .1 15 0 10 0 50 RBSOA (R e peti tive pu ls e) 0 0.01 0 .00 1 0.01 0 .1 1 0 20 0 40 0 600 800 1 000 1 20 0 140 0 P ulse wid th :P w (se c) C ollector-E m itte r volta ge : V ce (V) Power dera ting fo r IGB T (per device) 2 50 Co llecte r P ow er Diss ipa tio n : Pc ( W) 2 00 1 50 1 00 50 0 0 20 40 60 80 1 00 1 20 140 1 60 Case Temper ature : Tc (°C)