7MBR10SA-120

7MBR 10SA-120 Power Integrated Module (PIM) I Features • NPT-Technology • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching IGBT PIM 1200V 6x10A+Chopper I Outline Drawing I Equivalent Circuit I Absolute Maximum Ratings ( Tc=25°C) Items Inverter Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) 2 It (Non Repetitive) Collector-Emitter Voltage Gate –Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque* Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM IO IFSM VCES VGES IC IC PULSE PC VRRM Tj TStg VISO Test Conditions Continuous 1ms 1 device 50Hz/60Hz sinus wave Tj=150°C, 10 ms, sinus wave 25°C / 80°C 25°C / 80°C Ratings 1200 ± 20 15 / 10 30 / 20 10 75 1600 10 105 55 1200 ± 20 15 / 10 30 / 20 75 1200 +150 -40 ∼ +125 2500 3.5 Units V A W V A As V A W V °C V Nm 2 Brake Chopper Rectifier Continuous 1ms 1 device 25°C / 80°C 25°C / 80°C A.C. 1min. Note: *:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) 7MBR 10SA-120 I Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage IGBT PIM 1200V 6x10A+Chopper Symbols ICES IGES VGE(th) VCE(sat) Cies ton tr,x tr,i toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr,x toff tf IRRM R B Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=10mA VGE=15V Chip IC = 10A Terminal f=1MHz, VGE=0V, VCE=10V VCC = 600V IC = 10A VGE = ±15V RG = 120Ω Inductive Load IF=10A IF=10A IF=10A Chip Terminal Chip Terminal Min. 5.5 Typ. Max. Units 7.2 2.1 2.15 1200 0.35 0.25 0.10 0.45 0.08 2.3 2.35 1.1 1.2 1.0 200 8.5 2.7 pF 1.2 0.6 1.0 0.3 µs mA nA V Inverter IGBT Input Capacitance Turn-on Time Turn-off Time FRD Diode Forward On-Voltage Reverse Recovery Time Forward Voltage Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current 3.2 350 1.5 1.0 1.0 200 2.6 1.2 0.6 1.0 0.3 1.0 520 3450 V ns V mA mA nA V Rectifier NTC Resistance B Value VR =1600V VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=10V Chip IC=10A Terminal VCC = 600V IC = 10A VGE = ±15V RG = 120Ω VR=1200V T= 25°C T=100°C T=25 / 50°C Brake Chopper 2.10 2.20 0.35 0.25 0.45 0.08 5000 495 3375 µs mA Ω K 465 3305 I Thermal Characteristics Items Thermal Resistance (1 device) Symbols Rth(j-c) Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT Rectifier Diode With Thermal Compound Min. Typ. Max. Units 1.67 2.78 1.67 °C/W 1.85 0.05 Contact Thermal Resistance 7MBR 10SA-120 IGBT PIM 1200V 6x10A+Chopper 7MBR 10SA-120 IGBT PIM 1200V 6x10A+Chopper 7MBR 10SA-120 IGBT PIM 1200V 6x10A+Chopper 7MBR 10SA-120 IGBT PIM 1200V 6x10A+Chopper Specification is subject to change without notice January 1999b