7MBR10SC120

7MBR10SC120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 10A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso Condition Continuous 1ms Collector current Tc=25°C Tc=80°C Tc=25°C Tc=80°C Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C 50Hz/60Hz sine wave Tj=125°C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute Rating 1200 ±20 15 10 30 20 10 75 1200 ±20 15 10 30 20 75 1200 1600 1600 10 145 125 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A °C V A A A 2s °C °C V V N·m *1 Recommendable value : 1.3 to 1.7 N·m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. Converter Thyristor IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR10SC120 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT V GT V TM V FM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=10mA VGE=15V, Ic=10A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =600V IC=10A VGE=±15V RG=120Ω IF=10A chip terminal IF=10A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=10A, VGE=15V chip terminal V CC =600V IC=10A VGE=±15V RG=120Ω V R=1200V V DM =1600V V RM =1600V VD=6V, IT=1A VD=6V, IT=1A ITM=10A chip terminal IF=10A chip terminal V R=1600V T=25°C T=100°C T=25/50°C Characteristics Typ. Max. 50 200 5.5 7.2 8.5 2.1 2.15 2.6 1200 0.35 0.25 0.45 0.08 2.3 2.35 1.2 0.6 1.0 0.3 3.2 350 50 200 2.6 1.2 0.6 1.0 0.3 50 1.0 1.0 100 2.5 1.0 Unit µA nA V V pF µs Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns µA nA V µs Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 2.1 2.2 0.35 0.25 0.45 0.08 Brake Thyristor Converter 0.92 0.95 1.1 1.2 5000 495 3375 µA mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 50 520 3450 µA Ω K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 1.67 2.78 1.67 1.00 1.85 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C(typ.) 7MBR10SC120 25 25 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C(typ.) VGE= 20V 15V 12V 20 20 VGE= 20V 15V 12V Collector current : Ic [ A ] 15 10V 10 Collector current : Ic [ A ] 15 10V 10 5 5 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 25 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C(typ.) Tj= 25°C 20 Tj= 125°C 15 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 10 4 Ic= 20A 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 5000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 1000 Cies 600 15 500 400 10 200 5 100 Coes Cres 50 0 5 10 15 20 25 30 35 0 0 20 40 60 80 0 100 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module 7MBR10SC120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=120Ω, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=120Ω, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 5 10 15 20 50 0 5 10 15 20 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=±15V, Tj= 25°C 5000 ton 3 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=120Ω Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] Eon(125°C) tr 1000 2 Eon(25°C) 500 Eoff(125°C) 1 Eoff(25°C) Err(125°C) 100 tf Err(25°C) 50 50 100 500 1000 2000 0 0 5 10 15 20 Gate resistance : Rg [ Ω ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=±15V, Tj= 125°C 8 120 Collector current : Ic [ A ] [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=120Ω, Tj