7MBR15NE120

7MBR15NE120 IGBT MODULE 1200V / 15A / PIM IGBT Modules Features · High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol VCES VGES IC Collector current ICP -IC Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Average forward current IF(AV) Surge current IFSM Repetitive peak reverse voltage VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM I²t (Non-Repetitive) Collector-Emitter voltage Gate-Emitter voltage Tj Tstg Viso Condition Ra ting 1200 ±20 15 30 15 120 1200 ±20 10 20 88 1200 1 50 1600 1700 25 320 512 +150 -40 to +125 AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A A²s °C °C V N·m Inverter Continuous 1ms 1 device Brake Continuous 1ms 1 device 10ms Converter 50Hz/60Hz sine wave Tj=150°C, 10ms Tj=150°C, 10ms Operating junction temperature Storage temperature Isolation voltage Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N·m (M4) IGBT Module Electrical characteristics (Tj=25°C unless without specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Collector-Emitter voltage Input capacitance Switching time Symbol ICES IGES VGE(th) VCE(sat) -VCE Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff tf IRRM trr VFM IRRM Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=15mA VGE=15V, Ic=15A -Ic=15A VGE=0V, VCE=10V, f=1MHz VCC=600V IC=15A VGE=±15V RG=82 ohm IF=15A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=10A, VGE=15V VCC=600V IC=10A VGE=±15V RG=120 ohm VR=1200V IF=25A VR=1600V Min. 7MBR15NE120 Characteristics Typ. Max. 1.0 20 4.5 7.5 3.3 3.0 2400 1.2 0.6 1.5 0.5 0.35 1.0 0.1 3.3 0.8 0.6 1.5 0.5 1 0.6 1.4 1.0 Unit mA µA V V V pF µs µs µs µs µs mA µA V µs µs µs µs mA µs V mA Inverter (IGBT) Brake (FWD) Converter Brake (IGBT) Item Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current Thermal Characteristics Symbol Condition Min. Inverter IGBT Inverter FRD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 1.04 2.78 1.43 3.40 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic * NLU (Over current Limiting circuit) IGBT Module Characteristics (Representative) Inverter Collector current vs. Collector-Emitter voltage Tj=25°C 7MBR15NE120 Collector current vs. Collector-Emitter voltage Tj=125°C 30 30 Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 20 20 10 10 0 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=±15V, Tj=25°C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=±15V, Tj=125°C 100 Switching time : ton, tr, toff, tf [n sec.] 0 10 20 30 100 10 Collector current : Ic [A] 10 0 10 20 Collector current : Ic [A] 30 IGBT Module 7MBR15NE120 Switching time vs. RG Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C 1000 Dynamic input characteristics Tj=25°C 25 Switching time : ton, tr, toff, tf [n sec.] 600 15 400 10 200 5 100 0 100 Gate resistance : RG [ohm] 0 50 100 150 200 250 300 Gate charge : Qg [nC] 0 Forward current vs. Forward voltage VGE=0V Reverse recovery characteristics trr, Irr, vs. IF 30 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 100 Forward current : IF [A] 20 10 10 0 0 1 2 3 4 5 Forward voltage : VF [V] 1 0 5 10 Forward current : IF [A] 15 20 Transient thermal resistance Reversed biased safe operating area > < +VGE=15V, -VGE < 15V, Tj = 125°C, RG = 82 ohm = 140 Thermal resistance : Rth (j-c) [°C/W] 120 1 Collector current : Ic [A] 100 80 0.1 60 40 20 0.01 0.001 0 0.01 Pulse width : PW [sec.] 0.1 1 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 1000 Collector-Emitter voltage : VCE [V] 800 20 IGBT Module 7MBR15NE120 Switching loss vs. Collector current Vcc=600V, RG=82 ohm, VGE=±15V 6 10 Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss : Eon, Eoff, Err [mJ /cycle] 4 Capacitance : Cies, Coes, Cres [nF] 5 1 3 2 0.1 1 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Converter Diode Forward current vs. Forward voltage 30 25 Forward current : IF [A] 20 15 10 5 0 0 0.5 1.0 Forward voltage : VF [V] 1.5 2.0 IGBT Module Brake Collector current vs. Collector-Emitter voltage Tj=25°C 25 25 7MBR15NE120 Collector current vs. Collector-Emitter voltage Tj=125°C 20 20 Collector current : Ic [A] 15 Collector current : Ic [A] 0 1 2 3 4 5 15 10 10 5 5 0 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=120 ohm, VGE=±15V, Tj=25°C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time vs. Collector current Vcc=600V, RG=120 ohm, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] 100 100 10 0 5 10 Collector current : Ic [A] 15 20 10 0 5 10 Collector current : Ic [A] 15 20 IGBT Module 7MBR15NE120 Switching time vs. RG Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C 1000 Dynamic input characteristics Tj=25°C 25 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 800 20 1000 600 15 400 10 200 5 100 0 100 Gate resistance : RG [ohm] 1000 0 50 100 Gate charge : Qg [nC] 150 200 0 Reversed biased safe operating area < > +VGE=15V, -VGE = 15V, Tj < 125°C, RG = 120 ohm = 100 4 Switching loss vs. Collector current Vcc=600V, RG=120 ohm, VGE=±15V 80 Switching loss : Eon, Eoff, Err [mJ /cycle] 3 Collector current : Ic [A] 60 2 40 1 20 0 0 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200 0 0 5 10 Collector current : Ic [A] 15 20 Capacitance vs. Collector-Emitter voltage Tj=25°C 10 Capacitance : Cies, Coes, Cres [nF] 1 0.1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] IGBT Module Outline Drawings, mm 7MBR15NE120 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com