7MBR15SA140_01

7MBR15SA140 IGBT MODULE (S series) 1400V / 15A / PIM IGBT Modules Features Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso Condition Rating 1400 ±20 25 15 50 30 15 110 1400 ±20 25 15 50 30 110 1400 1600 15 155 120 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Continuous 1ms Collector current Tc=25°C Tc=75°C Tc=25°C Tc=75°C Unit V V A A A W V V A A W V V A A A 2s °C °C V N·m Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25°C Tc=75°C Tc=25°C Tc=75°C Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR15SA140 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1400V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=15mA VGE=15V, Ic=15A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =800V IC=15A VGE=±15V RG=82Ω IF=15A chip terminal Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.25 2.7 1800 0.35 0.25 0.1 0.45 0.08 2.4 2.45 1.2 0.6 1.0 0.3 V 3.3 0.35 1.0 0.2 2.7 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 µs mA µA V µs Unit mA µA V V pF µs Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value IF=15A VCES=1400V, VGE=0V VCE=0V, VGE=±20V IC=15A, VGE=15V chip terminal V CC =800V IC=15A VGE=±15V RG=82 Ω V R=1400V IF=15A chip terminal VR=1600V T=25°C T=100°C T=25/50°C 2.2 2.3 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375 Converter mA V mA Ω K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 1.14 1.85 1.14 1.30 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) °C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 35 VGE= 20V 15V 12V 35 7MBR15SA140 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 30 30 VGE= 20V 15V 12V 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] 10V 20 20 10V 15 15 10 10 5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 35 Tj= 25°C 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 30 Tj= 125°C 25 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 20 6 15 4 Ic= 30A 2 Ic= 15A Ic= 7.5A 10 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 5000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Cies 1000 Collector - Emitter voltage : VCE [ V ] 800 20 600 15 500 Coes 400 10 200 5 100 Cres 0 0 5 10 15 20 25 30 35 0 50 100 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] 0 150 50 IGBT Module 7MBR15SA140 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=82 ohm, Tj= 25°C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 82 ohm, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton tr ton tr 100 tf 100 tf 50 0 5 10 15 20 25 Collector current : Ic [ A ] 50 0 5 10 15 20 25 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=15A, VGE=±15V, Tj= 25°C 5000 7 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=82 ohm 6 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125°C) Switching time : ton, tr, toff, tf [ nsec ] 5 Eon(25°C) 4 Eoff(125°C) 3 Eoff(25°C) Err(125°C) 1 Err(25°C) 0 1000 500 toff ton tr 100 tf 50 30 100 Gate resistance : Rg [ohm] 1000 2 0 5 10 15 20 25 30 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=15A, VGE=±15V, Tj= 125°C 12 Eon 40 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10 30 8 6 20 4 Eoff 10 2 Err 0 30 0 100 Gate resistance : Rg [ohm] 1000 0 200 400 600 800 1000 1200 1400 1600 IGBT Module 7MBR15SA140 [ Inverter ] Forward current vs. Forward on voltage (typ.) 35 Tj=125°C Tj=25°C trr(125°C) 25 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=82 ohm 30 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 100 Forward current : IF [ A ] trr(25°C) 20 50 15 10 Irr(125°C) 10 Irr(25°C) 5 0 0 1 2 3 4 Forward on voltage : VF [ V ] 5 0 10 Forward current : IF [ A ] 20 [ Converter ] Forward current vs. Forward on voltage (typ.) 35 Tj= 25°C 30 Tj= 125°C 25 Forward current : IF [ A ] 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance 5 200 100 FWD[Inverter] Conv. Diode 1 IGBT [Inverter,Brake] 10 Thermal resistanse : Rth(j-c) [ °C/W ] 0.1 1 0.01 0.001 0.01 0.1 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] IGBT Module 7MBR15SA140 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 35 15V 12V VGE= 20V 35 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 30 30 VGE= 20V 15V 12V 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] 20 10V 20 10V 15 15 10 10 5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 35 Tj= 25°C 30 Tj= 125°C 8 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 25 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 20 6 15 4 Ic= 30A 2 Ic= 15A Ic= 7.5A 10 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 5000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=15A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Cies 1000 Collector - Emitter voltage : VCE [ V ] 800 20 600 15 500 Coes 400 10 200 5 100 Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 50 100 Gate charge : Qg [ nC ] 0 150 IGBT Module Outline Drawings, mm 7MBR15SA140 mass : 180g